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A method of epitaxial growth for reducing LED contact resistance

A technology of epitaxial growth and contact resistance, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of high hole concentration in contact resistance, achieve the effect of reducing contact resistance, reducing driving voltage, and improving the quality of LED products

Active Publication Date: 2017-08-29
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the technical problem to be solved in this application is to provide an epitaxial growth method that reduces the contact resistance of LEDs, effectively solving the problems of p-layer resistance, high contact resistance between pGaN epitaxial layer and ITO, and low hole concentration. , Improve the quality of LED products

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  • A method of epitaxial growth for reducing LED contact resistance
  • A method of epitaxial growth for reducing LED contact resistance
  • A method of epitaxial growth for reducing LED contact resistance

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Embodiment 1

[0038] see figure 1 , the present invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0039] An epitaxial growth method for reducing the contact resistance of LEDs, which sequentially includes: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, and alternately growing In doped In x Ga (1-x) N / GaN light-emi...

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Abstract

The invention discloses an epitaxial growth method for reducing the contact resistance of LEDs. A pInGaN / pGaN superlattice layer is grown after a P-type GaN layer doped with Mg is grown. The pInGaN / pGaN superlattice layer is grown by feeding TMGa, H2, Cp2Mg and TMIn. The pInGaN / pGaN superlattice layer can effectively reduce the contact resistance of a pGaN epitaxial layer and ITO and effectively reduces the driving voltage. As a pInGaN potential well has a hole range limiting function, so that the hole concentration of the pInGaN / pGaN superlattice layer can be effectively improved, the pInGaN / pGaN superlattice layer can be of high hole mobility, problems, for example, the resistance of the p layer and the contact resistance of the pGaN epitaxial layer and ITO are too high and the hole concentration is too low, are solved effectively, and the quality of LED products is enhanced.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, in particular to an epitaxial growth method for reducing LED contact resistance. Background technique [0002] At present, LED is a kind of solid-state lighting. The advantages of small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers. The scale of domestic LED production is also gradually expanding; The demand for growing epitaxial wafers is increasing day by day, and how to grow better epitaxial wafers is getting more and more attention. Because the quality of epitaxial layer crystals improves, the performance of LED devices can be improved, and the luminous efficiency, life, anti-aging ability, antistatic ability, and stability of LEDs will change with With the improvement of the crystal quality of the epitaxial layer, it is improved. [0003] At present, the market is conce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/0075H01L33/06H01L33/32H01L2933/0025
Inventor 张宇苗振林
Owner XIANGNENG HUALEI OPTOELECTRONICS