Low-temperature welding method for sapphires

A low-temperature welding, sapphire technology, applied in welding equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of component connection failure, high welding temperature, easy aging of joints, etc., to achieve the effect of ensuring reliability and wide application prospects

Active Publication Date: 2016-03-02
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problem of high welding temperature in the existing sapphire welding technology, which in turn leads to local stress concentration in the welded sapphire component joints and easily leads to component connection failure, and the existing low-temperature cementing method has low joint strength and easy aging of the joints problem, a novel low-temperature method for joining sapphire components is proposed

Method used

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Comparison scheme
Effect test

specific Embodiment approach 1

[0018] Specific embodiment one: a kind of sapphire low-temperature welding method of this embodiment is carried out according to the following steps:

[0019] 1. Weigh 40% to 50% of Bi according to the mass fraction 2 o 3 , 20% to 40% of B 2 o 3 , 5% to 20% of BaO, 2% to 10% of ZnO and 0.1% to 2% of SiO 2 , will Bi 2 o 3 , B 2 o 3 , BaO, ZnO and SiO 2 After mixing, the glass solder is obtained;

[0020] 2. Take two pieces of sapphire, grind and polish the surface of the sapphire to be welded with a diamond grinder until the Ra is 0.2 μm to 0.8 μm, then clean the polished sapphire surface to be welded with acetone and dry it;

[0021] 3. Weigh and mix the binder and the glass solder obtained in step 1 according to the volume ratio of 1.5 to 2:1, and then coat the two pieces of sapphire to be welded on the surface to be welded after grinding and polishing obtained in step 2. That is to obtain a sapphire with a coating layer; the adhesive is made by mixing 1% glycerol, ...

specific Embodiment approach 2

[0026] Specific embodiment two: the difference between this embodiment and specific embodiment one is: take 50% Bi by mass fraction in step one 2 o 3 , 30% B 2 o 3 , 10% BaO, 8% ZnO and 2% SiO 2 , will Bi 2 o 3 , B 2 o 3 , BaO, ZnO and SiO 2 After mixing, the glass solder is obtained. Other steps and parameters are the same as in the first embodiment.

specific Embodiment approach 3

[0027] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the main component of the sapphire described in step two is single crystal α-Al 2 o 3 , with a purity of 99.9%. Other steps and parameters are the same as those in Embodiment 1 or 2.

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Abstract

The invention relates to a welding method for sapphires, in particular to a low-temperature welding method for sapphires. The method solves the problems that in an existing welding technology for sapphires, welding temperature is high and component connection is likely to fail, and also solves the problems that in an existing low-temperature gluing method, joint strength is low and joint ageing is likely to occur. The method includes the steps that firstly, by mass, Bi2O3, B2O3, BaO, ZnO and SiO2 are weighed and mixed to obtain glass solder; secondly, the surfaces, to be welded, of sapphires are polished and then washed with acetone; thirdly, adhesive and the glass solder are mixed according to a volume ratio, and the sapphires are coated with the mixture; fourthly, the sapphires obtained in the third step are placed in an opposite contact mode and fixed through a clamp, and a connecting piece to be welded is obtained; fifthly, the connecting piece to be welded is welded. By means of the method, joint stress of sapphire components can be relieved, stability is good, and the joint ageing phenomenon can be avoided. The method is used for welding sapphires.

Description

technical field [0001] The invention relates to a sapphire low-temperature welding method. Background technique [0002] As an excellent optical window material, sapphire has broad application prospects in the fields of aerospace, electronics and optics. However, sapphire has a single crystal structure, and it is impossible to use growth methods to prepare components with complex shapes for practical applications. Therefore, the development of suitable connection technologies plays an important role in promoting the practical application of sapphire in various high-tech fields; [0003] Brazing is the traditional connection method of sapphire. Using active high-temperature solder, such as AgCuTi, CuTi, etc., can realize the connection of sapphire and prepare complex sapphire components. However, the welding temperature is relatively high, most of which are higher than 800°C. The deformation of the components is relatively large, and it is easy to cause local stress concentr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/008B23K1/20C03C8/24
CPCB23K1/0008B23K1/008B23K1/20B23K1/206C03C8/24
Inventor 林铁松何鹏祝明
Owner HARBIN INST OF TECH
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