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A kind of preparation method of LED chip and LED chip

A technology of LED chip and current diffusion layer, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing gold thickness and increasing production costs, and achieve the effects of reducing the amount of light, saving gold thickness, and reducing voltage

Active Publication Date: 2018-01-30
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the problems of light absorption and aluminum pollution are solved, the cost of gold accounts for the most important part in the LED chip manufacturing process, and increasing the thickness of gold will undoubtedly greatly increase the production cost

Method used

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  • A kind of preparation method of LED chip and LED chip
  • A kind of preparation method of LED chip and LED chip
  • A kind of preparation method of LED chip and LED chip

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Embodiment Construction

[0035] To further illustrate the various embodiments, the present invention is provided with accompanying drawings. These drawings are a part of the disclosure of the present invention, which are mainly used to illustrate the embodiments, and can be combined with related descriptions in the specification to explain the operating principles of the embodiments. With reference to these contents, those skilled in the art should understand other possible implementations and advantages of the present invention. Components in the figures are not drawn to scale, and similar component symbols are generally used to denote similar components.

[0036] The present invention will be further described in conjunction with the accompanying drawings and specific embodiments.

[0037] refer to figure 1 As shown, the LED chip provided by the present invention includes: a substrate 101, an N-type layer 102, an active layer 103, a P-type layer 104, a current blocking layer 30, a first current sp...

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Abstract

The invention relates to an LED chip having properties of good photoelectricity, simple structure and low cost and an LED chip manufacturing method. According to the LED chip and the LED chip manufacturing method, a second current diffusion layer is added between a current blocking layer and a P-type layer to make partial current pass through the second current diffusion layer to an active layer below the current blocking layer, the active layer below the current blocking layer is fully utilized, light emitting efficiency is improved, a utilization area of the active layer is improved, current density is further reduced, a voltage of the LED chip is reduced, the structure further has the light reflection effect, light emitting efficiency is improved, an electrode layer can be simplified, and production cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an LED chip with good photoelectricity, simple structure and low cost and a preparation method. Background technique [0002] LED (Light Emitting Diode), light-emitting diode, is a solid-state semiconductor device that can convert electrical energy into visible light, and it can directly convert electricity into light. As the world's most attention-grabbing new-generation light source, LED is known as the most promising green lighting source in the 21st century because of its advantages such as high brightness, low heat, long life, non-toxicity, and recyclability. [0003] Because the current accumulation effect of the LED chip is particularly obvious, that is, the current is mainly concentrated in the part of the light-emitting layer directly below the electrode, the lateral expansion is relatively small, and the current distribution is very uneven, resulting in excessive local cur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14
CPCH01L33/14H01L33/145
Inventor 刘英策陈凯轩李俊贤张永陈亮魏振东黄新茂
Owner XIAMEN CHANGELIGHT CO LTD
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