A metal doped ge-sb-te based multi-value storage phase change material and phase change memory
A ge-sb-te, phase change material technology, applied in electrical components and other directions, can solve the problems of high energy consumption, poor phase change performance, unstable intermediate state, etc., to achieve low energy consumption, high stability, high density The effect of multi-value storage
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Embodiment 1
[0053] A Cu-doped Ge 2 Sb 2 Te 5 Phase change memory material, the structural formula is: Cu x (Ge 2 Sb 2 Te 5 ) 1-x , where x=5%, which is formed by co-sputtering of Cu, Ge, Sb, and Te four kinds of single substance targets.
[0054] Will Cu x (Ge 2 Sb 2 Te 5 ) 1-x As the material of the thin film layer of the phase-change memory material, a phase-change memory is prepared. The schematic diagram of the phase-change memory unit of the phase-change memory is as follows image 3 As shown, it includes a top electrode 10, a first isolation layer 20, a phase-change memory material film layer 30, a second isolation layer 40, a lower electrode 50, and a top electrode 10 and a phase-change memory material film layer arranged in sequence on a substrate 101. 30 electrical contacts, the material of the top electrode 10 and the bottom electrode 50 is TiW, the thickness is 200nm, the material of the first isolation layer 20 and the second isolation layer 40 are both SiO 2 , th...
Embodiment 2
[0056] An Ag-doped Ge 2 Sb 2 Te 5 Phase change memory material, the structural formula is: Ag x (Ge 2 Sb 2 Te 5 ) 1-x , where x=10%, which is formed by co-sputtering four simple substance targets of Ag, Ge, Sb and Te.
Embodiment 3
[0058] A Zn-doped Ge 2 Sb 2 Te 5 Phase change memory material, the structural formula is: Zn x (Ge 2 Sb 2 Te 5 ) 1-x , wherein x=15%, which is formed by co-sputtering of Zn, Ge, Sb and Te four kinds of single substance targets.
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