A metal doped ge-sb-te based multi-value storage phase change material and phase change memory

A ge-sb-te, phase change material technology, applied in electrical components and other directions, can solve the problems of high energy consumption, poor phase change performance, unstable intermediate state, etc., to achieve low energy consumption, high stability, high density The effect of multi-value storage

Active Publication Date: 2018-12-14
HONOR DEVICE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the first aspect of the embodiment of the present invention provides a metal-doped Ge-Sb-Te-based multi-value storage phase-change material to solve the poor phase-change performance of multi-value storage materials in the prior art , unstable intermediate state, high energy consumption, etc.

Method used

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  • A metal doped ge-sb-te based multi-value storage phase change material and phase change memory
  • A metal doped ge-sb-te based multi-value storage phase change material and phase change memory
  • A metal doped ge-sb-te based multi-value storage phase change material and phase change memory

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Embodiment 1

[0053] A Cu-doped Ge 2 Sb 2 Te 5 Phase change memory material, the structural formula is: Cu x (Ge 2 Sb 2 Te 5 ) 1-x , where x=5%, which is formed by co-sputtering of Cu, Ge, Sb, and Te four kinds of single substance targets.

[0054] Will Cu x (Ge 2 Sb 2 Te 5 ) 1-x As the material of the thin film layer of the phase-change memory material, a phase-change memory is prepared. The schematic diagram of the phase-change memory unit of the phase-change memory is as follows image 3 As shown, it includes a top electrode 10, a first isolation layer 20, a phase-change memory material film layer 30, a second isolation layer 40, a lower electrode 50, and a top electrode 10 and a phase-change memory material film layer arranged in sequence on a substrate 101. 30 electrical contacts, the material of the top electrode 10 and the bottom electrode 50 is TiW, the thickness is 200nm, the material of the first isolation layer 20 and the second isolation layer 40 are both SiO 2 , th...

Embodiment 2

[0056] An Ag-doped Ge 2 Sb 2 Te 5 Phase change memory material, the structural formula is: Ag x (Ge 2 Sb 2 Te 5 ) 1-x , where x=10%, which is formed by co-sputtering four simple substance targets of Ag, Ge, Sb and Te.

Embodiment 3

[0058] A Zn-doped Ge 2 Sb 2 Te 5 Phase change memory material, the structural formula is: Zn x (Ge 2 Sb 2 Te 5 ) 1-x , wherein x=15%, which is formed by co-sputtering of Zn, Ge, Sb and Te four kinds of single substance targets.

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Abstract

The invention provides a metal-doped Ge-Sb-Te-based multi-value storage phase change material, the general formula is: Mx(GeaSbbTec)1-x, wherein M is a doped metal element, and the M is Cu, Ag and at least one of Zn, x represents the atomic number percentage of M, 0

Description

technical field [0001] The invention relates to the field of phase-change storage materials, in particular to a metal-doped Ge-Sb-Te-based multi-value storage phase-change material and a phase-change memory. Background technique [0002] Due to its significant technical advantages, phase change memory is considered by the International Semiconductor Industry Association to replace flash memory and dynamic random storage, and become one of the mainstream products of semiconductor memory in the future. At present, the research of phase change memory mainly focuses on high speed, low power consumption and so on. In order to meet the requirements of mass information storage, the research on high-density storage of phase change memory is particularly important. [0003] The traditional methods for realizing high-density phase-change memory include: reducing the area of ​​phase-change cells and reducing the area of ​​peripheral circuits. The former needs to improve the device str...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/00
Inventor 缪向水余念念童浩徐荣刚赵俊峰张树杰
Owner HONOR DEVICE CO LTD
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