A device for real-time testing of nonlinear parameters of cmos image sensors
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HARBIN INST OF TECH
- Publication Date
- 2018-01-30
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Abstract
Description
technical field
[0001] The invention belongs to the field of CMOS image sensor testing. Background technique
[0002] In satellite optical communication, CMOS image sensor is the main component of the optical system. In order to realize the reliability and safety of its space application, it is very important for the screening test of CMOS image sensor chips, especially the testing and screening of its nonlinear parameters, which will directly affect the output image of CMOS image sensor chips The amplitude and quality of the signal will affect the acquisition and tracking accuracy of the satellite optical communication system to a certain extent.
[0003] The method usually used is manual testing to test the nonlinearity of the CMOS image sensor chip. The disadvantage is that the test accuracy of the manual method is difficult to guarantee, and it is also difficult to guarantee a comprehensive test of the full field of view of the CMOS image sensor chip. . Therefore, the...