Inverter circuit and driving method thereof

Abstract

The invention discloses an inverter circuit and a driving method thereof. The inverter circuit is composed of first, second, third and fourth transistors and a capacitor. The grid electrode and drain electrode of the first transistor are in connection with high voltage; the source electrode of the first transistor is in connection with the source electrode of the second transistor, the gird electrode of the third transistor, and one end of the capacitor; the grid electrode of the second transistor, and the grid electrode of the fourth transistor are both in connection with an incoming signal; the drain electrode of the second transistor is in connection with low voltage; the drain electrode of the third transistor is in connection with the high voltage; the source electrode of the third transistor, the source electrode of the fourth transistor, and the other end of the capacitor are all in connection with an output port; the drain electrode of the fourth transistor is in connection with the low voltage. The inverter circuit can realize inverter low power consumption.

Description

technical field [0001] The invention relates to the field of thin film transistor integrated circuits, in particular to an inverter circuit and a driving method thereof. Background technique [0002] An inverter is the basic unit of a digital integrated circuit. When the input signal is high, the output signal is low; when the input signal is low, the output signal is high. A traditional CMOS inverter consists of a P-type transistor and an N-type transistor. With the development of thin film transistor technology, especially the development of oxide semiconductor thin film transistors, the use of unipolar transistors to directly integrate digital circuits is an important research direction for the development of scientific and industrial circles. [0003] Oxide semiconductor transistors have high carrier mobility, high compatibility with amorphous silicon technology, low manufacturing cost, good uniformity and high current switching ratio, etc., and have good development p...

AI Technical Summary

Problems solved by technology

However, since only N-type oxide thin film transistors can work stably, the traditional inverter circuit structure applied to oxide thin film transistors will have the characteristics of high power consumption, low output swing, and slow response speed.

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