A method of preparing high-brightness homogeneous LEDs on gan substrates or gan/al2o3 composite substrates using mocvd technology
A composite substrate, high-brightness technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems that restrict the quality of nitride semiconductor materials and device performance, new device development, high defect density, etc.
Active Publication Date: 2018-03-27
SINO NITRIDE SEMICON +1
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Problems solved by technology
However, in the current heteroepitaxy method centered on the two-step growth method, the lattice mismatch and thermal mismatch between the heterogeneous substrate and the epitaxial layer lead to a high defect density in the material, which severely restricts the nitrogen Further improvement of compound semiconductor material quality and device performance and research and development of new devices
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Embodiment 1 1 MOCVD preparation LED pic 。 pic 1GaN( or GaN/Al2O3) 101；n-GaN102；n-Inx1Ga1-x1N/GaN(0<x1≤x，0<x≤0.15)103；InxGa1-xN/GaN(0<x≤0.15)104；p-Inx3Ga1-x3N/GaN/Aly3Ga1-y3N(0<x3≤x，0<y3≤0.15)105，Al、In and p；p-AlGaN106；p-GaN107。 pic 2 Embodiment 2
[0016] figure 1 It is a vertical cross-sectional view of a high-brightness homogeneous LED with a novel hole-expanding layer structure prepared by MOCVD technology in Example 1 of the present invention. figure 1 including GaN substrates (or GaN / Al 2 o 3 composite substrate) 101; n-GaN layer 102; multi-period n-In x1 Ga 1-x1 N / GaN(01 ≤x, 0x Ga 1-x N / GaN (0x3 Ga 1-x3 N / GaN / Al y3 Ga 1-y3 N(03 ≤x, 03 ≤0.15) superlattice hole expansion layer 105, in which the Al composition, In composition and p-type doping concentration change gradiently with the increase of the hole expansion layer growth period; p-AlGaN electron blocking layer 106; p-GaN Layer 107. figure 2 It is a vertical cross-sectional view of a high-brightness homogeneous LED with a novel hole-expanding layer structure prepared by MOCVD technology in Example 2 of the present invention. figure 2 including GaN substrates (or GaN / Al 2 o 3 composite substrate) 201; n-GaN layer 202; multi-period n-In x1 Ga 1-x1 N / ...
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Abstract
The invention provides a method for preparing a homogeneous LED with a novel hole expansion layer structure on a GaN substrate or a GaN / Al2O3 composite substrate by using MOCVD. The method comprises designing a hole expansion layer in an optimized way between an InGaN / GaN multi-quantum well active layer and a P-GaN layer, wherein the Al component, the In component, and the p-type doped concentration of the hole expansion layer generate a gradient change varying with an increase in a growth thickness or period, the hole expansion layer may be a single-layer p-AlInGaN hole expansion layer with gradually-changed components and doping, a multi-period p-AlInGaN / AlGaN superlattice-structured hole expansion layer with gradually-changed components and doping, a multi-period p-InGaN / GaN / AlGaN superlattice-structured hole expansion layer with gradually-changed components and doping, or a multi-period p-AlInGaN / InGaN / AlGaN superlattice-structured hole expansion layer with gradually-changed components and doping. The method for growing the hole expansion layer in an optimized way improves an LED current expansion effect and effectively increases the luminous efficiency of an homogeneous LED. The method has good application prospect.
Description
technical field [0001] The present invention relates to the technical field of semiconductor optoelectronics, a method for manufacturing a light-emitting diode with a homogeneous substrate, in particular to a method for preparing a p-type expansion layer (hole expansion layer) with a new structure by using MOCVD (metal organic compound vapor phase epitaxy) technology A method for high-brightness homogeneous LEDs. Background technique [0002] In recent years, the research and development of group III nitride materials with excellent physical and chemical properties has become one of the fastest growing industries, and has been widely used in blue and white light-emitting diodes (LEDs), laser diodes (LDs), high-density information storage , high electron mobility transistors, and high-performance detector devices have made significant progress. However, in the current heteroepitaxy method centered on the two-step growth method, the lattice mismatch and thermal mismatch betwe...
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IPC IPC(8): H01L33/00H01L33/32
Inventor 贾传宇殷淑仪张国义童玉珍
Owner SINO NITRIDE SEMICON