High-light-efficiency spot-evening LED chip with sapphire substrate and preparation method of LED chip
A sapphire substrate and LED chip technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of insufficient luminous efficiency of LED chips and uneven distribution of emitted light spots, and achieve uniform LED emission beams , Improve the light output efficiency and expand the effect of the luminous angle
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[0029] The high light efficiency of the present invention can uniform spot sapphire substrate LED chips, such as Figure 5 As shown, it includes a sapphire substrate layer 1 , an N-type GaN layer 2 , a multi-quantum well light-emitting layer 3 and a P-type GaN layer 4 from top to bottom. The surface of the sapphire substrate layer 1 is provided with a concave microlens structure, and each concave microlens in the structure is arranged in an array, and the horizontal diameter of a single concave microlens is 20-50 μm, and the vertical depth is 3-10 μm . The concave microlens structure is prepared by femtosecond laser pulse impact and polished by chemical etching. The concave microlens structure has the effect of diffusing the beam and homogenizing the spot, such as Figure 4 It is shown that the light is emitted from the sapphire substrate LED chip layer with a refractive index of n1, and passes through the surface of the concave microlens to enter the air layer with a refrac...
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