Back Gate Field Effect Transistor Based on Contact Electrification

Abstract

The invention provides a back gate field effect transistor based on contact electrification. The back gate field effect transistor includes: a conductive substrate; an insulating layer formed on the front surface of the conductive substrate; a field effect transistor component including: a channel layer, a drain, a source and a gate; and a triboelectric power generation component including: static friction a layer formed on the lower surface of the gate; a movable friction layer disposed opposite to the static friction layer at a preset distance; and a second conductive layer formed on the outer side of the movable friction layer, which is electrically connected to the source; Wherein, the static friction layer and the movable friction layer are located at different positions of the triboelectric series, and under the action of external force, the static friction layer and the movable friction layer can switch back and forth between the separation state and the contact state. The invention utilizes the electrostatic potential generated by the triboelectric generator as the gate signal of the back gate field effect transistor to realize the regulation and control of carrier transport characteristics in the semiconductor.

Description

technical field [0001] The invention relates to the technical field of electronic components in the electronics industry, in particular to a back gate field effect transistor based on contact electrification. Background technique [0002] Field effect transistors are based on transistor devices that control the current transport process in the element by using a gate voltage. The metal-oxide-semiconductor field-effect transistor (MOSFET) based on the back gate SOI structure has simple structure, low electric field, high transconductance and good short channel characteristics, and its back substrate can be used as the back gate, and the back gate voltage to tune the width of the conductive channel in the top silicon. Although the field effect transistor technology is very mature, in view of the three-terminal structure of the device unit, the grid power supply needs to be specially provided, and the integration is complicated, and the pressure sensing device based on this ty...

AI Technical Summary

Problems solved by technology

However, piezoelectric electronic transistors must be prepared with piezoelectric materials, and the controllability of the piezoelectric potential generated by them, as well as the selection and application of materials, are subject to many restrictions.

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