Perovskite film preparation method and application

A perovskite and lead source technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve problems such as changing the stoichiometric ratio of perovskite films, difficult to control the reaction process, and affecting performance. The effect of low cost, improved performance, and simple process

Inactive Publication Date: 2016-04-06
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not easy to control the reaction process, and it is easy to get too much alkyl amine halide, t...

Method used

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  • Perovskite film preparation method and application
  • Perovskite film preparation method and application
  • Perovskite film preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Embodiment 1 (one-step solution spin-coating method, comparative example)

[0054] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass was ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol in sequence, blown dry with nitrogen gas, and immediately put it into an ultraviolet ozone surface treatment equipment (UVO) for 15 minutes, and then The PEDOT:PSS solution was spin-coated at 3000 rpm, and thermally annealed at 150° C. in air for 15 minutes to obtain a hole transport layer with a thickness of about 30 nm. Then PbI 2 and CH 3 NH 3 I is dissolved in the DMF (N,N-methylformamide) solution in a molar ratio of 1:1, and PbI in the solution 2 and CH 3 NH 3 The mass concentration of I was 45wt%, and the perovskite precursor solution was obtained by heating at 70° C. for 5 h. The perovskite precursor solution was spin-coated on the hole transport layer at a speed of 5000 rpm. Thermal annealing f...

Embodiment 2

[0056] Embodiment 2 (two-step solution spin-coating method, comparative example)

[0057] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass was ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol in sequence, blown dry with nitrogen gas, and immediately put it into an ultraviolet ozone surface treatment equipment (UVO) for 15 minutes, and then The PEDOT:PSS solution was spin-coated at 3000 rpm, and thermally annealed at 150° C. in air for 15 minutes to obtain a hole transport layer with a thickness of about 30 nm. Then PbI at a concentration of 350mg / ml 2 and 40mg / ml of CH 3 NH 3 I was dissolved in DMF (N,N-methylformamide) and isopropanol solution respectively, and stirred for 5 h to obtain a precursor solution. PbI 2 The solution was spin-coated on the hole transport layer at a speed of 1800rpm, and thermally annealed for 10-15min to obtain PbI 2 film. After CH 3 NH 3 A solution of I was spin...

Embodiment 3

[0059] Embodiment 3 (near space sublimation method)

[0060] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass was ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol in sequence, blown dry with nitrogen gas, and immediately put it into an ultraviolet ozone surface treatment equipment (UVO) for 15 minutes, and then The PEDOT:PSS solution was spin-coated at 3000 rpm, and thermally annealed at 150° C. in air for 15 minutes to obtain a hole transport layer with a thickness of about 30 nm. Then PbI at a concentration of 350mg / ml 2 and 40mg / ml of CH 3 NH 3 I was dissolved in DMF (N,N-methylformamide) and isopropanol solution respectively, and stirred for 5 h to obtain a precursor solution. PbI 2 The solution was spin-coated on the hole transport layer at a speed of 1800rpm, and thermally annealed for 10-15min to obtain PbI 2 film. CH 3 NH 3 Solution I was spin-coated on FTO glass at 1100rpm, and ann...

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Abstract

The invention belongs to the perovskite photoelectric material and device technology field and particularly relates to a perovskite film preparation method and the application. The perovskite film preparation method comprises steps that, a lead source and an amine salt are respectively dissolved in an organic solvent to acquire a lead source precursor solution and an amine salt precursor solution; the two precursor solutions are respectively coated on two foundations in a spin coating mode, the solvent is removed through heating, and uniform films are acquired; the two films are oppositely pasted and are separated through a pad in the middle to form a close distance space, through vacuum heating, the amine salt sublimates, the sublimated amine salt and the lead source react to acquire the perovskite film. The perovskite film prepared through the method has better morphology, the method is suitable for preparing large-area photoelectric devices, and performance and experiment batch repeatability of devices can be remarkably improved when the method is applied to the devices.

Description

technical field [0001] The invention belongs to the technical field of perovskite photoelectric materials and devices, in particular to a preparation method and application of a perovskite film. Background technique [0002] Organic-inorganic hybrid alkylamine lead halide perovskite materials show excellent performance and broad application prospects in optoelectronic devices due to their high carrier mobility, solution processing, and low cost. Since the first report of perovskite solar cells in 2009, its photoelectric conversion efficiency is less than 4%. In 2013, the efficiency broke through 15%, and the efficiency has exceeded 21%. Science Weekly selected "perovskite solar cell photoelectric conversion efficiency breakthrough 15%" as one of the world's top ten technological breakthroughs in 2013. In addition, the excellent photoelectric properties of perovskite can be used to prepare electroluminescent devices with tunable emission wavelength, high purity and narrow em...

Claims

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Application Information

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IPC IPC(8): H01L51/48
CPCH10K71/10Y02E10/549
Inventor 谭占鳌郭强王志斌李聪王福芝戴松元
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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