Aluminium nitride substrate for microwave power tube and manufacturing method therefor

A technology of aluminum nitride substrate and microwave power, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of device volume reduction, achieve volume reduction, solve the problem of packaging and interconnection heat dissipation, and avoid pressing wire plating Effect

Active Publication Date: 2016-04-13
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the structure of these products needs to be sealed with a ceramic and metal base, which is not conducive to reducing the size of the device

Method used

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  • Aluminium nitride substrate for microwave power tube and manufacturing method therefor
  • Aluminium nitride substrate for microwave power tube and manufacturing method therefor
  • Aluminium nitride substrate for microwave power tube and manufacturing method therefor

Examples

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Embodiment

[0036] Using tape casting equipment, at a drying temperature of 120°C, a single sheet of green porcelain tape with a thickness of 0.27mm and a length and width of 210mm was obtained. Three layers of 0.27-thick aluminum nitride green ceramic strips were pressed into blocks using a dry press under a pressure of 2.0 kpsi. And use mechanical punching equipment to punch through holes with a diameter of 0.6mm. The tungsten paste is coated on the side wall of the through hole by using a screen and a printing machine, and after drying, the surface circuit and the bottom circuit are printed with the tungsten paste by using a screen and a printing machine. After drying, use a raw cutting machine to cut the whole plate of raw porcelain blocks according to the marked line to obtain units. Sintering is carried out at a temperature of 1700-1900° C. to obtain a cooked porcelain substrate. The substrate is subjected to chemical nickel plating, and after the nickel plating is completed, chem...

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Abstract

The invention discloses an aluminium nitride substrate for a microwave power tube. Metal wiring is arranged on the structural surface of the aluminium nitride substrate; a hole side wall is metalized; the bottom surface is grounded and metalized fully; multiple pipe cores are welded and interconnected on the metalized surface layer; the grounding requirements are satisfied through the metallization of the hole side wall and the full metallization of the bottom surface; a multi-layer co-firing process is adopted; aluminium nitride ceramic is used as the ceramic base material, and tungsten is used as the metalizing material; interconnection between an upper layer and a lower layer is formed by adopting a hole side wall metalizing process; the surface tungsten metal wiring layer is plated by adopting a chemical nickel plating process and a chemical gold plating process. The aluminium nitride substrate for the microwave power tube has the advantages that compared with the thermal conductivity of less than 10W / mK of an organic substrate and about 30W / mK of an aluminium oxide substrate, the thermal conductivity of the aluminium nitride substrate is improved to 170W / Mk, so that the packaging requirement of a high-power density microwave device can be satisfied; and in addition, the hole side wall metallization process, the chemical nickel plating process and the chemical gold plating process are adopted, so that the aluminium nitride substrate is suitable for high efficiency mass production.

Description

technical field [0001] The invention relates to an aluminum nitride substrate for a microwave power tube and a manufacturing method thereof, which is a high-power-density microwave substrate manufacturing method for a SiC power tube or a GaN power tube, and belongs to the technical field of microwave power tubes. Background technique [0002] With the rapid development of SiC power tubes or GaN power tubes, the heat generated by the device increases rapidly, which will cause the temperature of the device to rise rapidly, thereby affecting the working state of the chip. Therefore, higher requirements are placed on the heat dissipation of the interconnect substrate. At present, two types of substrates, which are based on polymers and alumina ceramics, are widely used. With the continuous increase of device power, it is difficult for these two types of substrates to meet the requirements of use. [0003] For polymer substrates, due to their low cost and easy molding, they are ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/15
CPCH01L23/15
Inventor 陈寰贝夏庆水
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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