Aluminum nitride substrate for microwave power tube and manufacturing method thereof

A technology of aluminum nitride substrate and microwave power, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of device volume reduction, achieve volume reduction, solve the problem of packaging and interconnection heat dissipation, and avoid pressing wire plating Effect

Active Publication Date: 2018-01-16
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure of these products needs to be sealed with a ceramic and metal base, which is not conducive to reducing the size of the device

Method used

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  • Aluminum nitride substrate for microwave power tube and manufacturing method thereof
  • Aluminum nitride substrate for microwave power tube and manufacturing method thereof
  • Aluminum nitride substrate for microwave power tube and manufacturing method thereof

Examples

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Embodiment

[0036] Using tape casting equipment, at a drying temperature of 120°C, a single sheet of green porcelain tape with a thickness of 0.27mm and a length and width of 210mm was obtained. Three layers of 0.27-thick aluminum nitride green ceramic strips were pressed into blocks using a dry press under a pressure of 2.0 kpsi. And use mechanical punching equipment to punch through holes with a diameter of 0.6mm. The tungsten paste is coated on the side wall of the through hole by using a screen and a printing machine, and after drying, the surface circuit and the bottom circuit are printed with the tungsten paste by using a screen and a printing machine. After drying, use a raw cutting machine to cut the whole plate of raw porcelain blocks according to the marked line to obtain units. Sintering is carried out at a temperature of 1700-1900° C. to obtain a cooked porcelain substrate. The substrate is subjected to chemical nickel plating, and after the nickel plating is completed, chem...

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Abstract

The invention relates to an aluminum nitride substrate for a microwave power tube, the structure of which is metal wiring on the surface layer; metallization on the side wall of the hole; full metallization on the bottom surface, welding and interconnection of multiple tube cores on the metallization of the surface layer, and metallization on the side wall of the hole. Metallization and full metallization of the bottom surface meet the needs of grounding; using multi-layer co-firing technology, aluminum nitride ceramics are selected as the ceramic matrix material, tungsten is used as the metallization material, and the hole side wall metallization process is used to form the interconnection between the upper and lower layers. Nickel and electroless gold plating processes are used to plate the surface tungsten metal circuit layer. Advantages: Compared with the thermal conductivity of the organic substrate less than 10W / mK and the thermal conductivity of the alumina substrate about 30W / mK, the thermal conductivity of the substrate is increased to 170 W / mK, which can meet the packaging requirements of high power density microwave devices. In addition, the hole side wall metallization process and chemical nickel plating and chemical gold plating processes are adopted, which is suitable for high-efficiency mass production.

Description

technical field [0001] The invention relates to an aluminum nitride substrate for a microwave power tube and a manufacturing method thereof, which is a high-power-density microwave substrate manufacturing method for a SiC power tube or a GaN power tube, and belongs to the technical field of microwave power tubes. Background technique [0002] With the rapid development of SiC power tubes or GaN power tubes, the heat generated by the device increases rapidly, which will cause the temperature of the device to rise rapidly, thereby affecting the working state of the chip. Therefore, higher requirements are placed on the heat dissipation of the interconnect substrate. At present, two types of substrates, which are based on polymers and alumina ceramics, are widely used. With the continuous increase of device power, it is difficult for these two types of substrates to meet the requirements of use. [0003] For polymer substrates, due to their low cost and easy molding, they are ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/15
Inventor 陈寰贝夏庆水
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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