Large power semiconductor laser with stable light spots

Abstract

A large power semiconductor laser with stable light spots successively comprises a substrate, a lower wrapping layer, an active region, an upper wrapping layer and a contact layer from bottom to top. The upper wrapping layer and the contact layer are provided with a ridge-type structure. Channels are formed at two sides of the ridge-type structure. The depth of the channels is smaller than the total thickness of the upper wrapping layer and the contact layer. The part, except the ridge-type structure, on the upper surface of the contact layer and the surfaces of the channels are covered by dielectric films. The dielectric films and the ridge-type structure are covered by a first metal electrode layer. The bottom surface of the substrate is provided with a second metal electrode layer. The first metal electrode layer is sintered on a heat sink, and air isolation layers are arranged between a solder and the bottom parts of the channels. The upper wrapping layer of the laser is relatively thick, the ridge-type structure is prepared, lateral emission paths of heat generated by the active region in work are blocked by the air isolation layers, the heat is vertically emitted mainly through the ridge-type contact layer, so that the refractive index gradients of the middle part of the ridge-type structure and the active region close to the channel parts do not increase with the increasing of generated heat, and near-field light spots are more stable.

Description

technical field [0001] The invention relates to a high-power semiconductor laser with stable light spot, belonging to the technical field of semiconductor lasers. Background technique [0002] High-power semiconductor lasers have the advantages of small size, high integration, high electro-optic conversion efficiency, and low cost, and are widely used in material processing, laser printing and display, pumping solid-state and fiber lasers and other fields. These applications require that the optical power distribution of the laser is uniform and stable, that is, the near-field and far-field spots of the semiconductor laser are uniform, and the spot size does not change with current or temperature fluctuations. [0003] In order to ensure high power output and reliability, high-power semiconductor lasers generally use a wide-strip structure to reduce the optical power density and injection current density on the cavity surface. Different from semiconductor lasers with narrow...

AI Technical Summary

Problems solved by technology

This method uses the external cavity mode selection method, which increases the number of components and affects the optical path, which will be affected in the application of optoelectronic integration

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