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Device for shielding heat, device for growing ingot comprising same, and method for growing ingot using same

The technology of a growth device and a growth method is applied in the field of crystal ingot growth device and the preparation of single-crystal silicon ingot, which can solve the problems of lower product yield, higher price of crystal ingot, increase of dislocation, etc., so as to reduce power and improve quality. Effect

Inactive Publication Date: 2016-04-13
LG SILTRON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the ingot price may increase due to increased heater power, and, when growing a single crystal, the occurrence of dislocations in the single crystal may increase, or the product yield may decrease

Method used

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  • Device for shielding heat, device for growing ingot comprising same, and method for growing ingot using same
  • Device for shielding heat, device for growing ingot comprising same, and method for growing ingot using same
  • Device for shielding heat, device for growing ingot comprising same, and method for growing ingot using same

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Embodiment Construction

[0030] Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. The technical scope of the embodiments will fall within the scope of the present invention, and, within the scope of the embodiments, components or components can be added, deleted, and modified. figure 1 is a schematic diagram of an ingot growth apparatus including an upper thermal shield with adjustable hole size according to an embodiment.

[0031] refer to figure 1 , the crystal ingot growing device according to the embodiment may include: a chamber 10; a crucible 300 containing a silicon melt; a seed chuck 610 for fixing a seed crystal 600 for pulling the crystal ingot from the silicon melt; A lifting unit (not shown) connected to the chuck 610 is used to lift and rotate the seed crystal chuck 610; the heating unit 400 of the heating crucible 300; the side heat shield 500 arranged on the side of the heating unit 400 is used for Shielding heat; the upper the...

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Abstract

An embodiment of the present invention relates to a device for growing an ingot from a silicon melt received in a crucible using a seed, the device comprising: a chamber for providing a space in which a series of processes for growing the ingot are performed; a crucible arranged within the chamber; a heater part arranged outside of the crucible; a seed chuck for securing the seed; an elevating means connected to the seed chuck; and an upper heat shield which is arranged on the upper side of the crucible, has a hole through which the ingot being grown can pass, and is capable of controlling the size of the hole through which the ingot can pass.

Description

technical field [0001] The invention relates to a crystal ingot growing device and a method for preparing a single crystal silicon crystal ingot. Background technique [0002] A silicon single wafer used as a material of a semiconductor device is manufactured by slicing a single crystal ingot manufactured using a pulling (CZ) method. [0003] Methods for growing silicon single crystal ingots using the CZ method include: a dipping process, in which polysilicon is melted in a quartz crucible, and then a seed crystal is dipped into the silicon melt; a necking process, in which the seed crystal is pulled to grow an elongated crystal; Shoulder, crystals are grown diametrically to produce crystals with a target diameter. [0004] Thereafter, a body growing process and a body growing process are performed to grow a silicon single crystal ingot: in the body growing process, a silicon single crystal ingot having a predetermined diameter is grown to a desired length; and in the body ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/14C30B15/20C30B29/06C30B15/30
Inventor 成瑨奎崔日洙金度延
Owner LG SILTRON