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Programmable circuit based on memristor/metal-oxide-semiconductor field-effect transistor (MOSFET) and realization method thereof

A technology for programming circuits and implementation methods, applied in information storage, static memory, digital memory information, etc., can solve the problems of high cost, huge area, complex programmable chip circuit, etc., and achieve the effect of novel ideas and simple circuit structure

Active Publication Date: 2016-05-04
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chip cost is closely related to the chip area, while the traditional programmable chip circuit is complicated, the area is huge, the cost is high, and the design is difficult

Method used

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  • Programmable circuit based on memristor/metal-oxide-semiconductor field-effect transistor (MOSFET) and realization method thereof
  • Programmable circuit based on memristor/metal-oxide-semiconductor field-effect transistor (MOSFET) and realization method thereof
  • Programmable circuit based on memristor/metal-oxide-semiconductor field-effect transistor (MOSFET) and realization method thereof

Examples

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0024]This embodiment provides a programmable circuit based on Memristor / MOSFET, including a memristor resistance control module, a memristor, and a system circuit; the memristor resistance control module includes a first NMOS transistor M1, a second The NMOS transistor M2, the third NMOS transistor M3, and the fourth NMOS transistor M4, the gate of the first NMOS transistor M1 is connected to the drain of the first NMOS transistor M1 and the gate of the second NMOS transistor M2, and As the first programming input port of the memristor resistance control module, the gate of the third NMOS transistor M3 is connected to the gate of the fourth NMOS transistor M4 and the drain of the fourth NMOS transistor M4 And as the second programming input port of the memristor resistance control module, the source of the first NMOS transistor M1 is connected to the d...

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Abstract

The invention relates to a programmable circuit based on a memristor / a metal-oxide-semiconductor field-effect transistor (MOSFET) and a realization method of the programmable circuit. Through using the memiristor and a metal oxide semiconductor (MOS) tube in a combining manner, a programming voltage can generate a stable current which changes the resistance of the memiristor, the changeability and nonvolatility of the resistance of the memirstor are brought into play, and a programming effect is achieved. By the method disclosed by the invention, a memiristor model is successfully built in simulation program with integrated circuit emphasis (SPICE) software, the programmable circuit based on the memristor is put forward by using the model, and simulation validation is performed for the whole circuit. The programmable circuit combined by the memiristor and the MOS tube is simple in structure, small in tube number, high in integration level, and in favor of further developing integrated circuits to nanoscale.

Description

technical field [0001] The invention relates to the field of programmable chips, in particular to a programmable circuit based on Memristor / MOSFET and its realization method. Background technique [0002] Programmable chips are widely used in the current market. Through the combination of software and hardware, engineers can change the circuit structure inside the chip through software programming, so as to realize the functions of adjusting circuit output frequency, bandwidth, gain and so on. Traditional programmable chips mainly use a large number of MOSFETs to build complex circuit systems, and control the switching of MOSFETs through programming voltages to achieve the purpose of programming, such as MCU, CPLD, FPGA, DSP, and MPU. The chip cost is closely related to the chip area, while the traditional programmable chip circuit is complicated, the area is huge, the cost is high, and the design is difficult. With the emergence of new microelectronic devices, the combinat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00G11C14/00
CPCG11C13/0009G11C14/009
Inventor 魏榕山李睿林汉超张鑫刚
Owner FUZHOU UNIV
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