Supercharge Your Innovation With Domain-Expert AI Agents!

Chemical-mechanical planarization of polymer films

A technology of chemical mechanics and polishing compositions, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as limiting performance

Active Publication Date: 2016-05-11
CMC MATERIALS INC
View PDF16 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, abrasive particles can cause some defects during polishing, including scratches on the surface of the polymer, which limit the performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical-mechanical planarization of polymer films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] This example shows that the combination of a metal ion which is a Lewis acid and a ligand which is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxyl-substituted N-heterocycle is effective in the transfer of a polymer membrane. Effectiveness in removal rate.

[0051] Spin-on-carbon (SoC) polymer wafers were polished with different polishing compositions using conventional CMP equipment. The wafers were polished with seven polishing compositions (Polishing Compositions 1A to 1G), each containing only metal ions, only ligands, or both metal ions and ligands, as described in Table 1 below.

[0052] Each of the polishing compositions 1A to 1G contained 0.05% by weight of cerium oxide particles in an aqueous carrier and the pH was adjusted to 2.3 with ammonium hydroxide, if necessary. Polishing Compositions 1A and 1B contain 5 mM Al 3+ , Polishing Compositions 1C and 1D contain 5mMFe 3+ , and Polishing Compositions...

Embodiment 2

[0058] This example shows that the combination of a metal ion which is a Lewis acid and its ligand which is an aromatic carboxylic acid, aromatic sulfonic acid, aromatic acid amide, amino acid, or hydroxy-substituted N-heterocycle efficiently removes Polymer films while exhibiting minimal (or no) removal of tetraethoxysilane (TEOS).

[0059] Spin-on-carbon (SoC) polymer wafers and tetraethoxysilane (TEOS) wafers were polished with different polishing compositions using conventional CMP equipment. The wafers were polished with nine polishing compositions (Polishing Compositions 2A to 2I), as described in Table 2. Polishing compositions 2B, 2C, 2D, 2G, 2H, and 2I were used to polish SoC polymer wafers, but not TEOS wafers. Each of Polishing Compositions 2A to 21 contained 5 mM Fe in an aqueous carrier 3+ Particle with 0.05% by weight of cerium oxide, and adjust the pH to 2.3 with ammonium hydroxide if necessary. Each polishing composition also contained ligands, as described ...

Embodiment 3

[0067] This example demonstrates that the combination of a metal ion which is a Lewis acid and a ligand which is an aromatic carboxylic acid, aromatic sulfonic acid, aromatic acid amide, amino acid, or hydroxy-substituted N-heterocycle effectively removes aggregated physical film.

[0068] Spin-on-carbon (SoC) polymer wafers were polished with different polishing compositions using conventional CMP equipment. The wafers were polished with 14 polishing compositions (Polishing Compositions 3A to 3N), as described in Table 3. Each of Polishing Compositions 3A to 3N contained 5 mM Fe in an aqueous carrier 3+ with 0.05% by weight of cerium oxide particles, and adjust the pH to the value recorded in Table 3 with ammonium hydroxide if necessary. The aqueous carrier used in each polishing composition was water. Each polishing composition also contained ligands, as described in Table 3.

[0069] Substrates were finished with EPIC on a Logitech benchtop polisher TM D200 pads (Cabot...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of 1 to 4.

Description

technical field [0001] The invention relates to a chemical mechanical polishing composition and its application in chemical mechanical polishing substrate. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, multiple layers of conductive, semiconducting, and dielectric materials are deposited onto or removed from the surface of a substrate. Thin layers of conductive, semiconducting, and dielectric materials can be deposited onto substrate surfaces by several deposition techniques. Deposition techniques commonly found in modern microelectronics processing include physical vapor deposition (PVD) (also known as sputtering), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating (ECP). [0003] As layers of material are sequentially deposited onto and removed from the substrate, the uppermost surface of the substrate can become non-planar and require planarization. Planar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24D3/06C09K3/14
CPCC09D5/00C09G1/02
Inventor S.帕利卡拉库蒂亚图尔贾仁合J.戴萨德
Owner CMC MATERIALS INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com