Guide cylinder for single-crystal furnace

Abstract

The invention relates to a guide cylinder for a single-crystal furnace. The guide cylinder comprises an upper cylinder body, a lower cylinder body, a first guide plate, a second guide plate and a dispersing mechanism, wherein the upper cylinder body is a prismoid with a wide top and a narrow bottom; the lower cylinder body is connected with the bottom of the upper cylinder body; the first guide plate is obliquely arranged in the upper cylinder body; the upper end of the first guide plate is connected with the side wall below a feed port of the upper cylinder body; two opposite side walls of the upper cylinder body are connected with a first guide plate respectively; the second guide plate is positioned below the first guide plate; the lower end of the second guide plate is movably connected with the side wall above a discharge port of the upper cylinder body; two opposite side walls of the upper cylinder body are connected with a second guide plate respectively; and the dispersing mechanism is mounted in the lower cylinder body and movably connected below the discharge port of the upper cylinder body. The design has the advantages of simple structure, easiness in production, practicability and high efficiency.

Description

technical field [0001] The patent of the present invention relates to the technical field of single crystal furnaces, in particular to a draft tube for single crystal furnaces. Background technique [0002] When the single crystal furnace draws single crystal silicon rods, the quartz crucible containing polycrystalline silicon blocks and other raw materials is placed in the graphite crucible holder above the crucible holder, heated and melted in a protective atmosphere, and after the process temperature is adjusted, the seed crystal is guided. The flow tube is inserted into the molten polysilicon liquid, rotates counterclockwise with the crucible and lifts upwards, so that the polysilicon liquid crystallizes and solidifies into single crystal silicon rods according to the order of the silicon atoms of the seed crystal. [0003] At present, the structure of the guide cylinder of the single crystal furnace is a cylindrical structure with a gradually reduced diameter, which act...

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Problems solved by technology

[0004] However, in the existing structure, because the high-temperature gas flows fast in the guide tube and the flow resistance is small, the solid-liquid interface is concave to the solid side during the crystal growth process. If the depression is too large, it will cause radial inclusions. Oxygen content, resistivity, and native defects fluctuate too much, which makes the response parameter uniformity of the silicon wafer worse

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