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A wafer-level packaging method for rf MEMS switches

A wafer-level packaging and wafer technology, which is applied in the field of packaging to improve the performance of RFMEMS switches, can solve the problems of high switch mechanical Q value, low vibration stability, and cannot reduce radio frequency performance, and achieves improved performance and vibration stability. The effect of improved accuracy and efficiency, improved reliability and environmental adaptability

Active Publication Date: 2017-11-07
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The switch under low voltage will have a series of problems such as high mechanical Q value, low vibration stability, and reduced reliability, and the high-voltage environment will increase the driving voltage of the switch, which will affect the use
At the same time, as a radio frequency device, the signal line must be led out first when packaging, and its radio frequency performance must not be reduced.

Method used

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  • A wafer-level packaging method for rf MEMS switches
  • A wafer-level packaging method for rf MEMS switches

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Experimental program
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Embodiment

[0025] Such as figure 1 As shown, a wafer-level packaging method for RF MEMS switches provided in this embodiment includes a substrate 1, a transmission line 2, a switch cantilever beam structure 3, a sealing cap wafer 4, and engraved on the sealing cap wafer corresponding to The groove 5 of the transmission line and the cavity 6 corresponding to the switch structure, the bonding material 7 is embedded in the groove 5, the inert gas is used as the cavity atmosphere of the switch package, and the gas state in the cavity is controlled through the bonding process , using the method of wafer bonding to realize wafer-level packaging of RF MEMS switches.

[0026] Specific steps are as follows:

[0027] 1. The transmission line 2 and the cantilever beam structure 3 of the RF MEMS switch are completed on the substrate high-resistance silicon material 1, the thickness of the transmission line 2 is 2 μm, and the distance between the upper surface of the switch cantilever beam 3 and the...

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Abstract

The invention discloses a wafer level packaging method for an RF MEMS (Radio Frequency Micro-Electro-Mechanical Systems) switch. A cap sealing wafer of the RF MEMS is realized by single coating, double exposure and step-by-step etching; the cap sealing wafer is provided with a cavity corresponding a switch structure area and a groove corresponding to a signal transmission line; a bonding material is embedded into the groove and aligned with the switch wafer; a wafer level bonding method is adopted, and nitrogen or inert gas is adopted as a switch packaging cavity atmosphere to control the pressure of the cavity, so that packaging of the RF MEMS switch is realized. The method realizes packaging of a device and leading-out of a signal wire, ensures sealing of the cavity, meanwhile, prevents resonance of the switch, reduces damping of the switch in work, reduces the switch driving voltage, and improves the performance of the switch.

Description

technical field [0001] The invention belongs to the technical field of encapsulation of radio frequency micro-electromechanical systems (RF MEMS), in particular to a method for encapsulating the performance of RF MEMS switches. Background technique [0002] The RF MEMS switch contains a movable structure, which is easily affected by the external environment. Considering its reliability and environmental adaptability during use, it needs to be protected in the form of packaging to improve its practicability and reliability. . During the encapsulation process, its movable parts should be protected from damage, and the atmosphere in the cavity after encapsulation also affects the performance of the switch. The switch under low voltage will have a series of problems such as high mechanical Q value, low vibration stability, and reduced reliability, while the high-voltage environment will increase the driving voltage of the switch and affect its use. At the same time, as a radio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C3/00
CPCB81C3/001
Inventor 朱健姜理利贾世星
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD