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Preparation method of superhydrophobic dielectric material and dielectric material prepared by method

A technology of dielectric materials and dielectric materials, applied in chemical instruments and methods, laboratory containers, laboratory utensils, etc., can solve problems such as not considering the influence of surface roughness, so as to avoid excessive etching rate, Avoid excessive changes and reduce the effect of process complexity

Inactive Publication Date: 2016-06-01
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the main use of CF 4 The gas treats the surface of the material, but its effect on the surface roughness is not considered, thus limiting the application of the material

Method used

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  • Preparation method of superhydrophobic dielectric material and dielectric material prepared by method
  • Preparation method of superhydrophobic dielectric material and dielectric material prepared by method
  • Preparation method of superhydrophobic dielectric material and dielectric material prepared by method

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Embodiment 1

[0027] like figure 1 As shown, the present invention provides a treatment method applied to the superhydrophobic medium material of the dielectric electrowetting digital microfluidic chip. %; Lactic acid-glycolic acid copolymer is dissolved in dimethylformamide, the mass ratio of the two is 10%, and the two solutions are mixed at a volume ratio of 4:1. The mixed solution 1 of cellulose triacetate and lactic acid-glycolic acid copolymer can form a film on the surface of the substrate 2 (such as ITO glass, silicon wafer) by the method of spin coating, and then pass through two kinds of gas sources (CF 4 with CHF 3 ) reactive ion etching, carbon tetrafluoride (CF 4 ) during the treatment of the reaction gas source, the power is 100W~50W, the gas flow rate is 30sccm~10sccm; trifluoromethane (CHF 3 ) During the processing of the reaction gas source, the power is 50W, and the gas flow rate is 20 sccm (standard-state cubic centimeter per minute, standard-state milliliters per minu...

Embodiment 2

[0032] In this example, carbon tetrafluoride (CF 4 ) gradually reduce the power and reaction gas volume during the treatment of the reaction gas source. The specific performance is: firstly, the power is 100W, the flow rate is 30sccm, the time is 3min30s, and the surface roughness increases by 1.24 times. image 3 As shown in (a); Then, the power is 50W, the flow rate is 30sccm, and the time is 3min30s, the surface roughness increases by 0.27 times, as image 3As shown in (b); the power is 50W, the flow rate is 10sccm, the time is 7min30s, and the surface roughness increases by 0.68 times, such as image 3 (c) in; finally, trifluoromethane (CHF 3 ) Reaction gas source treatment (keep the power and reaction gas volume unchanged): power is 50W, flow rate is 20sccm, time is 7min30s, surface roughness is reduced by 0.68 times, such as image 3 In (d) shown.

[0033] In the present invention, the increase or decrease of surface roughness is represented by the ratio relative to t...

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Abstract

The invention discloses a preparation method of a superhydrophobic dielectric material and a dielectric material prepared by the method. The method comprises the following steps: 1. treating a dielectric material by using a carbon tetrafluoride reaction gas source, wherein the power is 100-50W, and the gas flow rate is 30-10sccm; and 2. treating the dielectric material treated in the step 1 by using a fluoroform reaction gas source, wherein the power is 50-75w, and the gas flow rate is 10-30sccm. The superhydrophobic dielectric material implements surface modification of the biological compatible material, and thus, has superhydrophobicity. The method is simple, is compatible with the current integrated circuit technique, and has important meanings for the application of the dielectric electrowetting digital microfluidic chip prepared from the material.

Description

technical field [0001] The present invention relates to the field of digital microfluidic technology of EWOD (Electrowetting on Dielectric, electrowetting effect on medium), relates to a modification treatment method applied to dielectric electrowetting digital microfluidic chip materials, in particular to a super A method for preparing a hydrophobic medium material and the prepared medium material. Background technique [0002] Dielectric electrowetting digital microfluidic chip, because of its low cost, high speed, high efficiency, and high integration, as a means of manipulating liquid droplets in the lab-on-chip (LOC), has great potential in the field of biomedicine. Wide application prospects. However, the traditional dielectric materials and hydrophobic materials used in dielectric electrowetting digital microfluidic chips limit the practicability of this device in biological detection. For example, some biological tests require direct contact with the human body, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J7/12C08L1/12C08L67/04B01L3/00
CPCB01L3/502707B01L2300/12B01L2300/166C08J7/12C08J7/126C08J2301/12C08J2467/04C08L1/12C08L67/04
Inventor 晁蕾周嘉
Owner FUDAN UNIV
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