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Silicon-based light modulator

A silicon-based optical modulator and modulator technology, applied in the directions of light guides, optics, instruments, etc., can solve the problem that the photoelectric modulation efficiency of the silicon-based modulator is not very high, and achieve the effect of improving the modulation efficiency and increasing the area

Active Publication Date: 2016-06-01
南通新微研究院 +1
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Problems solved by technology

[0004] However, the photoelectric modulation efficiency of silicon-based modulators in the prior art is still not very high, and corresponding technologies are needed to improve

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  • Silicon-based light modulator
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Embodiment Construction

[0047] The inventors found that, in order to cause more shifts in the spectrum under a certain voltage (that is, the silicon-based modulator has a higher modulation efficiency), the position of the PN junction interface is very important. On the one hand, it is due to the same concentration of electrons and space The change of the refractive index of the hole pair is inconsistent, and on the other hand, the intensity of the mode field in the ridge waveguide is not uniform at different positions. It is particularly important to improve the modulation efficiency of the modulator, and is also the focus of attention in the industry.

[0048] The traditional PN junction design includes three types, respectively forming PN junctions in the horizontal, vertical and mode field propagation directions. For horizontal PN junctions, the manufacturing process is more complicated; for vertical PN junctions, great alignment accuracy is required. Although the depletion region can be located a...

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Abstract

The invention provides a silicon-based light modulator. The silicon-based light modulator at least comprises a ridge waveguide, wherein the ridge waveguide comprises a flat plate part and a convex strip which is located in the middle of the flat plate part and is higher than the flat plate part; the ridge waveguide comprises first lightly-doped regions and second lightly-doped regions, and the first lightly doped regions comprise a first longitudinal lightly-doped region which is formed in the middle of the convex strip and is in the extending direction of the convex strip, and at least one first horizontal lightly-doped region which is formed on the convex strip and at the flat plate part and intersects the convex strip; the dope type of the second lightly-doped regions is different from that of the first lightly-doped regions, and the second lightly-doped regions are formed in the convex strip and the flat plate part on the outer side of the first lightly-doped regions so as to constitute horizontal and longitudinal PN junctions with the first lightly-doped regions. According to the silicon-based light modulator provided in the technical scheme, the PN junctions are formed by the multiple first horizontal lightly-doped regions and the second lightly-doped regions and are also formed by the first longitudinal lightly-doped region and the second lightly-doped regions, so that the area of depletion regions in a mode field can be increased, and the modulation efficiency of the silicon-based light modulator can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon-based light modulator. Background technique [0002] Silicon-based optical modulator is one of the core devices of on-chip optical logic, optical interconnect and optical processor, which is used to convert radio frequency electrical signals into high-speed optical signals. It can form a complete functional network with lasers, detectors and other wavelength division multiplexing devices. In recent years, through a large number of technical means, silicon-based modulators have been realized on a variety of silicon-based, mixed silicon-based, and compatible silicon-based materials, including silicon-on-insulator (SOI) materials, mixed materials of SOI and III-V compounds, strained Silicon materials, etc. Among them, since the manufacturing process of the silicon-based modulator based on the plasma dispersion effect produced on the SOI material is fully compatibl...

Claims

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Application Information

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IPC IPC(8): G02F1/01G02B6/122
Inventor 汪敬甘甫烷盛振武爱民仇超王曦邹世昌
Owner 南通新微研究院
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