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A gallium arsenide substrate low-brightness yellow light-emitting diode chip and manufacturing method thereof

A light-emitting diode, low-brightness technology, used in electrical components, circuits, semiconductor devices, etc., can solve problems such as irregularities and the decline in the ability of chip products to resist electrostatic breakdown.

Active Publication Date: 2018-01-19
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, thinning n type confinement layer 14, p The thickness of the type confinement layer 16 and reducing its doping can reduce the luminous intensity of the quaternary LED chip; but this solution may bring the phenomenon of 'thyristor', that is, irregular IV characteristics, and the design of this solution will cause Cause chip products to decline in the ability to resist electrostatic breakdown

Method used

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  • A gallium arsenide substrate low-brightness yellow light-emitting diode chip and manufacturing method thereof
  • A gallium arsenide substrate low-brightness yellow light-emitting diode chip and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0029] 1. Epitaxial wafer and chip production process steps:

[0030] 1. will n The type GaAs substrate is placed in the reaction chamber of the MOCVD system, heated to 600 ℃ ~ 700 ℃, the passivation layer on the surface of the substrate is removed, and the n One side of the type GaAs substrate grows to form a certain thickness, doped with silicon n type GaAs buffer layer.

[0031] 2. Using Al on the GaAs buffer layer x Ga 1-x As is the material for deposition, where, 0.1≤X≤1, the deposited n Thickness of type anti-reflection layer d matches the following relationship: n (λ) · d = N · λ / 2; where λ is the center wavelength of the electroluminescence of the epitaxial wafer, n (λ) is the refractive index of the layer material for light with a wavelength of λ, N is a positive integer, and 1≤ N ≤10.

[0032] 3. Deposition and formation on the anti-reflection layer n type carrier confinement layer.

[0033] 4. In n A double heterojunction active region layer is dep...

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Abstract

The invention provides a gallium arsenide-based low-brightness yellow light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of photoelectrons. An antireflection layer is arranged between a GaAs buffer layer and an n-type carrier limiting layer in a manufacturing process; and meanwhile, a p-type reflective absorbing layer is arranged between two p-type carrier limiting layers. A low-brightness yellow LED epitaxial wafer with a low-brightness yellow LED epitaxial structure is prepared from a GaAs substrate by metal organic compound vapor deposition equipment (MOCVD); and then the epitaxial wafer is processed into the independent LED chip through a chip technology. The gallium arsenide-based low-brightness yellow light-emitting diode chip lowers the quaternary yellow LED normal luminous intensity under the premise of not lowering the reliability or changing the external dimension of the LED chip, so that expansion of the application range of an AlGaInP quaternary LED chip is facilitated.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and specifically relates to the technical field of AlGaInP quaternary light emitting diode (LED). technical background [0002] Today's consumer electronic devices such as smartphones and computers use a large number of colored LED indicators. Because of their low brightness requirements, these indicators often use GaP-based binary and ternary low-brightness LED chips, which are characterized by the normal light intensity of 0.1 mcd to 10 mcd under working conditions. Compared with ternary LEDs, GaAs-based AlGaInP quaternary LEDs have higher reliability, larger production scale, and lower marginal costs. However, the normal luminous intensity of traditional quaternary yellow LEDs is usually 15 mcd or above. This kind of LED chip with higher brightness is used in the above-mentioned indicator light application, which will cause light leakage and other phenomena and reduce the appearance o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/44H01L33/00
CPCH01L33/0062H01L33/02H01L33/44
Inventor 赵宇林鸿亮张双翔杨凯何胜李洪雨田海军
Owner YANGZHOU CHANGELIGHT