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Gallium arsenide-based low-brightness yellow light-emitting diode chip and manufacturing method thereof

A light-emitting diode and low-brightness technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problem of chip products’ ability to resist electrostatic breakdown and other problems

Active Publication Date: 2016-06-15
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, thinning the n-type confinement layer 14, the thickness of the p-type confinement layer 16, and reducing their doping can reduce the luminous intensity of the quaternary LED chip; but this solution may bring the phenomenon of 'thyristor', that is, irregular At the same time, the design of this scheme will cause the chip product’s ability to resist electrostatic breakdown to decrease

Method used

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  • Gallium arsenide-based low-brightness yellow light-emitting diode chip and manufacturing method thereof
  • Gallium arsenide-based low-brightness yellow light-emitting diode chip and manufacturing method thereof

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Embodiment Construction

[0029] 1. Epitaxial wafer and chip production process steps:

[0030] 1. Place the n-type GaAs substrate in the reaction chamber of the MOCVD system, heat it to 600°C-700°C, remove the passivation layer on the surface of the substrate, and grow on one side of the n-type GaAs substrate to form a certain thickness n-type GaAs buffer layer doped with silicon.

[0031] 2. Using Al on the GaAs buffer layer x Ga 1-x As is the material for deposition, where, 0.1≤X≤1, the thickness d of the deposited n-type anti-reflection layer conforms to the following relationship: n(λ)d=N·λ / 2; where λ is the electroluminescence of the epitaxial wafer The central wavelength, n(λ) is the refractive index of the material of this layer to the light with wavelength λ, N is a positive integer, and 1≤N≤10.

[0032] 3. Depositing an n-type carrier confinement layer on the anti-reflection layer.

[0033] 4. Depositing and forming a double heterojunction active region layer on the n-type carrier confine...

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Abstract

The invention provides a gallium arsenide-based low-brightness yellow light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of photoelectrons. An antireflection layer is arranged between a GaAs buffer layer and an n-type carrier limiting layer in a manufacturing process; and meanwhile, a p-type reflective absorbing layer is arranged between two p-type carrier limiting layers. A low-brightness yellow LED epitaxial wafer with a low-brightness yellow LED epitaxial structure is prepared from a GaAs substrate by metal organic compound vapor deposition equipment (MOCVD); and then the epitaxial wafer is processed into the independent LED chip through a chip technology. The gallium arsenide-based low-brightness yellow light-emitting diode chip lowers the quaternary yellow LED normal luminous intensity under the premise of not lowering the reliability or changing the external dimension of the LED chip, so that expansion of the application range of an AlGaInP quaternary LED chip is facilitated.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and specifically relates to the technical field of AlGaInP quaternary light emitting diode (LED). technical background [0002] Today's consumer electronic devices such as smartphones and computers use a large number of colored LED indicators. Because of the low demand for brightness, these indicator lights often use GaP-based binary and ternary low-brightness LED chips, which are characterized by the normal light intensity of 0.1mcd to 10mcd under working conditions. Compared with ternary LEDs, GaAs-based AlGaInP quaternary LEDs have higher reliability, larger production scale, and lower marginal costs. However, the normal luminous intensity of traditional quaternary yellow LEDs is usually 15mcd or above. This kind of LED chip with higher brightness is used in the above-mentioned indicator light application, which will cause light leakage and reduce the appearance of the product. High ...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/44H01L33/00
CPCH01L33/0062H01L33/02H01L33/44
Inventor 赵宇林鸿亮张双翔杨凯何胜李洪雨田海军
Owner YANGZHOU CHANGELIGHT