Heat treatment apparatus and heat treatment method

However, when the heating temperature is increased, in addition to the sublimated products sublimated from the crosslinking agent and the like contained in the SOC film, low molecular polymers and the like are also scattered, so the amount of the sublimated products increases.

Therefore, in order to prevent the sublimate fr...

In embodiment 3-1, the difference between the maximum value and the minimum value of the film thickness and 3σ are respectively 1.47nm and 0.94nm, and in embodiment 3-2, the difference between the maximum value and the minimum value of the film thickness and 3σ are 0.77nm and 1.23nm, respectively. In addition, in Example 3-3, 3σ was 3.03 nm, but in Example 3-4, 3σ was 2.01 nm. Therefore, compared with Example 3-1, the difference between the maximum value and the minimum value of the film thickness of Example 3-2 and 3σ are small, and the uniformity of film thickness is good. Compared with Example 3-3, Example 3- The 3σ of 4 is small, and the uniformity of the film thickness is good. From this result, it can be seen that the uniformity of the film thickness can be improved by switching between opening and closing of the center exhaust using an exhaust opening and closing mechanism.

[0065] Moreover, using the peripheral exhaust port 31, an air curtain is formed around the processing atmosphere, thereby having the function of preventing volatile components from leaking to the outside. Therefore, the amount of exhaust gas going to the central exhaust port 34 can be reduced, thereby The exhaust volume is set to a small flow rate of, for example, 5 L/min. When the exhaust flow rate of the central exhaust port 34 is large and the air flow flowing from the outside of the wafer W into the central exhaust port 34 is too strong, the center of the wafer W will be raised due to the air flow, and unevenness will be formed on the surface of the wafer W. The in-plane uniformity of the film thickness deteriorates. On the other hand, if the exhaust flow rate of the center exhaust port 34 is set to a small flow rate of 5 L/min, the swelling of the film and the formation of uneven lines can be suppressed.

[0078] In addition, it is preferable to exhaust the sublimate efficiently after 20 seconds have elapsed since the heating of the wafer W, after the completion of the crosslinking reaction. Therefore, it is preferable to make the exhaust volume of the central exhaust port 34 larger than the exhaust volume of the outer peripheral exhaust port 31 . However, it is appropriate to increase the exhaust volume of the central exhaust port 34 and the exhaust volume of the outer peripheral exhaust port 31, depending on the type of coating film, viscosity, film thickness, and treatment. The shape of the container 1 changes.

[0081] Furthermore, the central exhaust port 34 is not limited to the structure in which one central exhaust port 34 is provided in the central portion of the lower surface side of the top plate portion 3 of the processing container 1. For example, as shown in FIG. 10(a), a plurality of, for example, eight circular exhaust ports 81 may be arranged at equal intervals in the circumferential direction on the circumference of a circle centered on the center of the wafer W as a central exhaust port when viewed from above. Mouth 34. In addition, as shown in FIG. 10( b ), slit-shaped openings 82 serving as central exhaust ports 34 are provided at four places at intervals of 90 degrees around the center of wafer W in plan view. Alternatively, as shown in FIG. 10( c), for example, eight rectangular openings 83 are arranged along a square centered on the center of the wafer W to form a central exhaust port 34 in plan view, as shown in FIG. 10( d ). ) The central exhaust port 34 is formed by arranging four triangular-shaped openings 84 at equal intervals in the circumferential direction around the center of the wafer W. In addition, as shown in FIG. 10( e ), double concentric circular slits 85a, 85b centered on the central portion of the wafer W (specifically, in the middle of the slits 85a, 85b There is a connecting portion, so it is arc-shaped) constitutes the center exhaust port 34 . As described above, the central exhaust port 34 is arranged symmetrically in the circumferential direction above the center of the wafer W. Therefore...