Heat treatment apparatus and heat treatment method

Abstract

The present invention provides a technique in which, in performing a heat treatment on a coating film formed on a substrate, a sublimate is suppressed from leaking out to the outside of a processing container and a good in-plane uniformity with respect to a film thickness of the coating film is obtained. The wafer coated with the SOC film is placed in the processing container (1), the wafer is heated, and the crosslinking reaction proceeds by performing the exhaust from a central exhaust port (34) in a small exhaust amount while performing the exhaust from outer circumferential exhaust ports (31) in a large exhaust amount. In another exemplary embodiment, only the exhaust by the outer circumferential exhaust ports (31) may be performed from the heating start of the wafer, and after 20 seconds from the heating start time, the exhaust from the central exhaust port (34) may be performed in addition to the exhaust from the outer circumferential exhaust ports (31). In another exemplary embodiment, the exhaust is performed only from the outer circumferential exhaust ports (31) for 20 seconds from the heating start time of the wafer, then the exhaust from the outer circumferential exhaust ports (31) is stopped, and the exhaust is performed only from the central exhaust port (34).

Description

technical field [0001] The present invention relates to a heat treatment device, a heat treatment method, and a storage medium for heating the substrate by exhausting the inside of the vessel after placing a substrate coated with a coating liquid in the treatment vessel. Background technique [0002] In semiconductor manufacturing steps, resist patterns tend to collapse due to the refinement of circuit patterns, and various countermeasures have been studied. As one of the countermeasures, a resist pattern is transferred to an underlying film formed on a semiconductor wafer (hereinafter referred to as "wafer"), and the wafer is etched using the pattern of the underlying film as an etching mask. As such an underlayer film, high plasma resistance and high etching resistance are required, and for example, a carbon film (SOC (Spinon Carbon) film) formed by a spin coating method is used. [0003] The wafer coated with the SOC film is heated after the coating process to promote th...

AI Technical Summary

Problems solved by technology

However, when the heating temperature is increased, in addition to the sublimated products sublimated from the crosslinking agent and the like contained in the SOC film, low molecular polymers and the like are also scattered, so the amount of the sublimated products increases.

Therefore, in order to prevent the sublimate fr

Images