Heat treatment apparatus and heat treatment method

A technology for heat treatment and treatment of containers, used in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc. The effect of uniformity

Active Publication Date: 2016-06-22
TOKYO ELECTRON LTD
4 Cites 6 Cited by

AI-Extracted Technical Summary

Problems solved by technology

However, when the heating temperature is increased, in addition to the sublimated products sublimated from the crosslinking agent and the like contained in the SOC film, low molecular polymers and the like are also scattered, so the amount of the sublimated products increases.
Therefore, in order to prevent the sublimate fr...
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Method used

In embodiment 3-1, the difference between the maximum value and the minimum value of the film thickness and 3σ are respectively 1.47nm and 0.94nm, and in embodiment 3-2, the difference between the maximum value and the minimum value of the film thickness and 3σ are 0.77nm and 1.23nm, respectively. In addition, in Example 3-3, 3σ was 3.03 nm, but in Example 3-4, 3σ was 2.01 nm. Therefore, compared with Example 3-1, the difference between the maximum value and the minimum value of the film thickness of Example 3-2 and 3σ are small, and the uniformity of film thickness is good. Compared with Example 3-3, Example 3- The 3σ of 4 is small, and the uniformity of the film thickness is good. From this result, it can be seen that the uniformity of the film thickness can be improved by switching between opening and closing of the center exhaust using an exhaust opening and closing mechanism.
[0065] Moreover, using the peripheral exhaust port 31, an air curtain is formed around the processing atmosphere, thereby having the function of preventing volatile components from leaking to the outside. Therefore, the amount of exhaust gas going to the central exhaust port 34 can be reduced, thereby The exhaust volume is set to a small flow rate of, for example, 5 L/min. When the exhaust flow rate of the central exhaust port 34 is large and the air flow flowing from the outside of the wafer W into the central exhaust port 34 is too strong, the center of the wafer W will be raised due to the air flow, and unevenness will be formed on the surface of the wafer W. The in-plane uniformity of the film thickness deteriorates. On the other hand, if the exhaust flow rate of the center exhaust port 34 is set to a small flow rate of 5 L/min, the swelling of the film and the formation of uneven lines can be suppressed.
[0078] In addition, it is preferable to exhaust the sublimate efficiently after 20 seconds have elapsed since the heating of the wafer W, after the completion of the crosslinking reaction. Therefore, it is preferable to make the exhaust volume of the central exhaust port 34 larger than the exhaust volume of the outer peripheral exhaust port 31 . However, it is appropriate to increase the exhaust volume of the central exhaust port 34 and the exhaust volume of the outer peripheral exhaust port 31, depending on the type of coating film, viscosity, film thickness, and treatment. The shape of the container 1 changes.
[0081] Furthermore, the central exhaust port 34 is not limited to the structure in which one central exhaust port 34 is provided in the central portion of the lower surface side of the top plate portion 3 of the processing container 1. For example, as shown in FIG. 10(a), a plurality of, for example, eight circular exhaust ports 81 may be arranged at equal intervals in the circumferential direction on the circumference of a circle centered on the center of the wafer W as a central exhaust port when viewed from above. Mouth 34. In addition, as shown in FIG. 10( b ), slit-shaped openings 82 serving as central exhaust ports 34 are provided at four places at intervals of 90 degrees around the center of wafer W in plan view. Alternatively, as shown in FIG. 10( c), for example, eight rectangular openings 83 are arranged along a square centered on the center of the wafer W to form a central exhaust port 34 in plan view, as shown in FIG. 10( d ). ) The central exhaust port 34 is formed by arranging four triangular-shaped openings 84 at equal intervals in the circumferential direction around the center of the wafer W. In addition, as shown in FIG. 10( e ), double concentric circular slits 85a, 85b centered on the central portion of the wafer W (specifically, in the middle of the slits 85a, 85b There is a connecting portion, so it is arc-shaped) constitutes the center exhaust port 34 . As described above, the central exhaust port 34 is arranged symmetrically in the circumferential direction above the center of the wafer W. Therefore...
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Abstract

The present invention provides a technique in which, in performing a heat treatment on a coating film formed on a substrate, a sublimate is suppressed from leaking out to the outside of a processing container and a good in-plane uniformity with respect to a film thickness of the coating film is obtained. The wafer coated with the SOC film is placed in the processing container (1), the wafer is heated, and the crosslinking reaction proceeds by performing the exhaust from a central exhaust port (34) in a small exhaust amount while performing the exhaust from outer circumferential exhaust ports (31) in a large exhaust amount. In another exemplary embodiment, only the exhaust by the outer circumferential exhaust ports (31) may be performed from the heating start of the wafer, and after 20 seconds from the heating start time, the exhaust from the central exhaust port (34) may be performed in addition to the exhaust from the outer circumferential exhaust ports (31). In another exemplary embodiment, the exhaust is performed only from the outer circumferential exhaust ports (31) for 20 seconds from the heating start time of the wafer, then the exhaust from the outer circumferential exhaust ports (31) is stopped, and the exhaust is performed only from the central exhaust port (34).

Application Domain

Semiconductor/solid-state device manufacturing

Technology Topic

Start timeEngineering +2

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  • Heat treatment apparatus and heat treatment method
  • Heat treatment apparatus and heat treatment method
  • Heat treatment apparatus and heat treatment method

Examples

  • Experimental program(13)
  • Comparison scheme(1)
  • Effect test(1)

Example Embodiment

[0101] [Example 1]
[0102] Examples performed to verify the effects of the embodiments of the present invention will be described. Using the heat treatment apparatus described in the embodiment of the present invention, the wafer W coated with the SOC film was heated to 350°C. Before the wafer W is heat-treated and taken out of the processing chamber 1 , exhaust is performed using the central exhaust port 34 and the peripheral exhaust port 31 , and the number of particles of 100 nm or larger is counted outside the processing chamber 1 . The exhaust flow rate of the central exhaust port 34 and the exhaust volume of the outer peripheral exhaust port 31 in each example were set as follows. In addition, after the wafer W is loaded into the processing container 1 and placed on the bottom structure 2 , heat treatment is performed for 80 seconds, and the ring-shaped opening and closing member 5 is opened to take out the wafer W.

Example

[0103] (Example 1-1)
[0104] The exhaust rate of the outer peripheral exhaust port 31 is set to 20 L/min, and the exhaust rate of the central exhaust port 34 is set to 10 L/min. The period from loading the wafer W into the processing chamber 1 to taking it out , Exhaust is carried out from the outer peripheral exhaust port 31 and the central exhaust port 34.

Example

[0105] (Example 1-2)
[0106] The settings were the same as in Example 1-1 except that the exhaust volume of the outer peripheral exhaust port 31 was set at 25 L/min, and the exhaust volume of the central exhaust port 34 was set at 5 L/min.

PUM

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Description & Claims & Application Information

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