Cu-in-ga-se quaternary alloy sputtering target

A cu-in-ga-se, quaternary alloy technology, applied in the direction of sputtering plating, electrical components, metal material coating technology, etc., can solve the problems of unclear manufacturing methods and achieve excellent in-plane uniformity Effect

Active Publication Date: 2012-10-17
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, as its production method, only a method of sintering raw material powder synthesized independently by hot pressing is described, so the specific production method is unclear.
In addition, there is no description about the oxygen concentration or bulk resistance of the obtained sintered body.

Method used

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  • Cu-in-ga-se quaternary alloy sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Weigh Cu, In, Ga and Se as raw materials so that the composition formula CuIn 1-x Ga x Se 2-y where x and y are 0.2 and 0, respectively. In addition, the concentration of each raw material at this time is 25%, 20%, 5%, and 50% for Cu, In, Ga, and Se, respectively.

[0054] These raw materials are put into a quartz ampoule, the inside is evacuated and sealed, and then placed in a furnace for synthesis. The temperature distribution is 5°C / min from room temperature to 100°C, 1°C / min to 400°C, 5°C / min to 550°C, and 5°C / min to 550°C. The rate of temperature increase up to 650°C was 1.66°C / min, and then it was kept at 650°C for 8 hours, and then cooled to room temperature in the inner furnace over 12 hours.

[0055] The CIGS synthesis raw material powder obtained in the above manner was subjected to hot pressing (HP) after passing through a 120-mesh sieve. The conditions for HP are that the temperature increase rate from room temperature to 750°C is 10°C / min, and then it...

Embodiment 2～ Embodiment 6

[0059] Table 1 summarizes the results of producing targets by changing the composition in the same manner as in Example 1, and performing sputtering evaluation. As shown in Table 1, in Examples 2 to 6, x representing the Ga concentration (atomic ratio) is in the range of 0

[0060] As shown in Table 1, the relative density of the CIGS sintered body of Example 2 was 98.8%, the oxygen concentration was 187ppm, the volume resistance was 72Ωcm, the variation in volume resistance was 3.6%, and the average particle diameter was 76μm. In addition, regarding the number of abnormal discharges, the number of abnormal discharges in one hour between 20 hours and 21 hours after the sputtering time was counted, and it was 0 times.

Embodiment 3

[0061] The relative density of the CIGS sintered body of Example 3 was 98.8%, the oxygen concentration was 183 ppm, the volume resistance was 80 Ωcm, the variation in volume resistance was 4.2%, and the average particle diameter was 55 μm. In addition, regarding the number of abnormal discharges, the number of abnormal discharges in one hour between 20 hours and 21 hours after the sputtering time was counted, and it was 0 times.

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Abstract

Provided is a quaternary alloy sputtering target comprising copper, indium, gallium, and selenium. Said quaternary alloy sputtering target is characterized by a composition represented by the composition formula CuIn1 - x Ga x Se2 -y (with x and y representing atomic ratios), a composition range of 0 x = 0.5 and 0 = y = 0.04, and a relative density of at least 90%. The provided CIGS quaternary alloy sputtering target has a high density, a low oxygen concentration, and a desired bulk resistance.

Description

technical field [0001] The present invention relates to a CIGS quaternary alloy sputtering target used when forming a Cu-In-Ga-Se (hereinafter referred to as CIGS) quaternary alloy thin film as a light-absorbing layer of a thin-film solar cell. Background technique [0002] In recent years, technical development of CIGS solar cells with high conversion efficiency as thin film solar cells is progressing. A vapor deposition method and a selenization method are known as methods for producing the light-absorbing layer of this thin-film solar cell. However, although solar cells manufactured by vapor deposition have advantages of high conversion efficiency, they have disadvantages of low film formation speed, high cost, and low productivity. On the other hand, the selenization method is also suitable for mass production in the industry, but after making a laminated film of Cu-Ga and In, it is necessary to perform a complex and dangerous process of heat treatment in an atmosphere ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34H01L31/04
CPCH01L31/0322C04B35/00C23C14/0623C23C14/3414Y02E10/541C23C14/34H01L31/04
Inventor 田村友哉高见英生生泽正克坂本胜铃木了
Owner JX NIPPON MINING & METALS CO LTD
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