Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of silver-doped modified ruthenium dioxide thick film resistor paste

A ruthenium dioxide, thick film resistor technology, applied in resistors, conductive materials dispersed in non-conductive inorganic materials, non-adjustable metal resistors, etc., to meet production needs, facilitate promotion and industrialized production.

Inactive Publication Date: 2017-04-05
XIDIAN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of preparation method of silver-doped modified ruthenium dioxide thick-film resistance paste, solve the problem that there is contradiction between low resistance and high TCR of existing thick-film resistance paste, this method has great influence on production process There are no special requirements for equipment and equipment, which is convenient for promotion and industrial production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] Weigh RuO according to the mass ratio of 4:2:0.5 2 powder, CuO powder and Ag powder; the RuO 2 Powder, CuO powder and Ag powder are mixed together to form a mixed material; the mixed material is added to the ball milling device, and deionized water and balls are added to the ball milling device, the ball milling device is turned on, and the mixed material is ball milled to obtain a ball milled Materials, during the ball milling process: 3ml of deionized water should be added to each gram of the mixed material; the ball-to-material ratio of the mixed material to the grinding ball is 1.5:1, the grinding ball is agate ball, and the ball milling time is controlled to 4h; The rotating speed is controlled at 400rpm; the ball milling material in the ball milling device is taken out, and the ball milling material is dried at 50°C to obtain a dry ball milling material; the dried ball milling material is pulverized by grinding, and then put into a crucible, and the crucible is he...

Embodiment 2

[0097] Weigh RuO according to the mass ratio of 8:4:2 2 powder, CuO powder and Ag powder; the RuO 2Powder, CuO powder and Ag powder are mixed together to form a mixed material; the mixed material is added to the ball milling device, and deionized water and balls are added to the ball milling device, the ball milling device is turned on, and the mixed material is ball milled to obtain a ball milled Materials, during the ball milling process: 7ml of deionized water should be added to each gram of the mixed material; the ball-to-material ratio of the mixed material to the grinding ball is 3:1, the grinding ball is agate ball, and the ball milling time is controlled to 6h; The rotating speed is controlled at 500rpm; the ball milling material in the ball milling device is taken out, and the ball milling material is dried at 70°C to obtain a dry ball milling material; the dried ball milling material is pulverized by grinding, then put into a crucible, and the crucible is heated to ...

Embodiment 3

[0102] Weigh RuO according to the mass ratio of 6:3:1 2 powder, CuO powder and Ag powder; the RuO 2 Powder, CuO powder and Ag powder are mixed together to form a mixed material; the mixed material is added to the ball milling device, and deionized water and balls are added to the ball milling device, the ball milling device is turned on, and the mixed material is ball milled to obtain a ball milled Materials, during the ball milling process: 5ml of deionized water should be added to each gram of the mixed material; the ball-to-material ratio of the mixed material to the grinding ball is 2:1, the grinding ball is agate ball, and the ball milling time is controlled to 5h; The rotating speed is controlled at 450rpm; the ball milling material in the ball milling device is taken out, and the ball milling material is dried at 60° C. to obtain a dry ball milling material; the dried ball milling material is pulverized by grinding, then put into a crucible, and the crucible is heated t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of silver-doped modified ruthenium dioxide thick-film resistance slurry. The method specifically comprises the following steps of: 1, using RuO2 powder, CuO powder and Ag powder to prepare a conductive phase; 2, using SiO2, Al2O3, CaO, BaO, B2O3, PbO and Bi2O3 to prepare a modified aluminosilicate glass phase; 3, using terpilenol, cellulose, butyl carbitol and castor oil to prepare an organic phase; and 4, uniformly mixing the conductive phase obtained in the step 1, the modified aluminosilicate glass phase obtained in the step 2 and the organic phase in the the step 3 to obtain the silver-doped modified ruthenium dioxide thick-film resistance slurry. According to the invention, the problem that a contradiction exists between low resistance and high TCR of the present thick-film resistance slurry is solved, the preparation method has no specific demands on the production process and device, and the popularization and the industrial production are facilitated.

Description

technical field [0001] The invention belongs to the technical field of thick-film slurry preparation methods, and in particular relates to a preparation method of silver-doped modified ruthenium dioxide thick-film resistor slurry. Background technique [0002] Thick film resistor paste is an electronic functional material integrating materials, chemical industry, metallurgy and electronic technology. It is the basic material for hybrid integrated circuits, surface mount technology, resistor networks, sensitive components and various discrete electronic components. The thick film resistors prepared by it have the characteristics of simple manufacture, excellent performance and strong stability, and are widely used in many fields such as aerospace, measurement and control systems, communication systems, medical equipment, hybrid integrated circuits and civilian electronic products. [0003] Thermistor is a kind of resistor whose resistance value changes greatly with temperatur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/20H01B1/22H01C7/00
CPCH01B1/20H01B1/22H01C7/00
Inventor 孙鹏李智敏张茂林闫养希黄云霞郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com