Metallization method of n-type double-sided solar cell, cell, component, and system

Abstract

The invention relates to a metalizing method for an N type double-sided solar cell, the cell, an assembly and a system. According to the metalizing method for the N type double-sided solar cell, a p<+> doping region and an n<+> doping region are distributed on the front surface and the back surface of a silicon wafer respectively, and the surface-passivated N type double-sided solar cell is finished; the metalizing process comprises the steps of printing metal paste to form a metal main gate electrode in contact with the front and back surfaces of the silicon wafer, and drying the metal main gate electrode, wherein the main gate electrode does not form ohmic contact with the p<+> doping region and the n<+> doping region on the front surface and the back surface of the silicon wafer; then enabling metal wires adhered with aluminum-doped silver paste and silver paste to be adhered to the front and back surfaces of the silicon wafer; and drying and sintering to form ohmic contact with the p<+> doping region and the n<+> doping region so as to form a thin gate line electrode, and finishing the metalizing of the cell. The metalizing method has the beneficial effect that the open-circuit voltage of the N type double-sided solar cell is improved, and the silver paste consumption of the cell is greatly lowered, so that the manufacturing cost of the cell piece is lowered consequently.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a metallization method of an N-type double-sided solar cell, a cell, a component, and a system. Background technique [0002] A solar cell is a semiconductor device that converts light energy into electrical energy. Its low production cost and high energy conversion efficiency have always been the goal pursued by the solar cell industry. The n-type solar cell has no light attenuation and long service life. The advantage is that it is an important development direction of high-efficiency crystalline silicon solar cells, and since the positive and negative electrodes of n-type solar cells can be made into conventional H-shaped grid electrode structures, not only the front side of the cell can absorb light, but the back surface can also absorb light. It can absorb reflected and scattered light to generate additional electricity, realizing double-sided power generation. [0003]...

AI Technical Summary

Problems solved by technology

[0003] However, the manufacturing cost of N-type batteries is about 15% higher than that of conventional batteries, which is mainly due to the printing of silver paste on both sides of the battery, and the consumption of silver is twice that of conventional batteries. The rise is about 10%, so reducing the silver paste consumption of the battery is the key to reducing the cost of this battery

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