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A Method for Prolonging the Lifetime of Photogenerated Electrons and Holes in (c,n)-tio2 Semiconductor Porous Bulk

A semiconductor, pore block technology, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc.

Inactive Publication Date: 2019-01-22
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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But its quantum efficiency still needs to be improved

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  • A Method for Prolonging the Lifetime of Photogenerated Electrons and Holes in (c,n)-tio2 Semiconductor Porous Bulk

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Example 1: (1) (C,N)-TiO 2 The shape of the semiconductor porous block is as follows: the middle is a cuboid, the bottom of the cuboid is a square, the side length of the square is 0.5 cm, the height is 3 cm, and the two ends are in the shape of a quadrangular pyramid, such as figure 1 As shown, the height of the upper pyramid is 3 cm, the bottom is the cross-section of the above cuboid, the ratio of the height of the upper and lower pyramids is 1, and the bottom is the size of the cross-section of the above square; (2) the above shape of (C,N)-TiO 2 Semiconductor porous blocks according to the figure 1 Put it into the liquid to be degraded in the way shown, and the liquid level is just at the junction of the cuboid and the pyramid exposed to the water surface; (3) The solar cooker has an automatic control system to control the movement of its position and the direction of rotation of the cooker, so that it always faces The direction of the sun; and project the focus...

Embodiment 2

[0016] Example 2: (1) (C,N)-TiO 2 The shape of the semiconductor porous block is as follows: the middle is a cuboid, the bottom of the cuboid is a square, the side length of the square is 5 cm, the height is 50 cm, and the two ends are in the shape of a quadrangular pyramid, such as figure 1 As shown, the upper pyramid is 50 cm high, and the bottom is the cross-section of the above cuboid, and the ratio of the height of the upper and lower pyramids is 0.5; (2) the above shape of (C,N)-TiO 2 Semiconductor porous blocks according to the figure 1 Put it into the liquid to be degraded in the way shown, and the liquid level is just at the junction of the cuboid and the pyramid exposed to the water surface; (3) The solar cooker has an automatic control system to control the movement of its position and the direction of rotation of the cooker, so that it always faces The direction of the sun; and project the focused light onto the end face of the photocatalytic block exposed to th...

Embodiment 3

[0017] Example 3: (1) (C,N)-TiO 2 The shape of the semiconductor porous block is as follows: the middle is a cuboid, the bottom of the cuboid is a square, the side length of the square is 2 cm, the height is 30 cm, and the two ends are in the shape of a quadrangular pyramid, such as figure 1 As shown, the upper pyramid is 25 cm high, and the bottom is the cross-section of the above cuboid, and the ratio of the height of the upper and lower pyramids is 0.8; (2) the above shape of (C,N)-TiO 2 Semiconductor porous blocks according to the figure 1 Put it into the liquid to be degraded in the way shown, and the liquid level is just at the junction of the cuboid and the pyramid exposed to the water surface; (3) The solar cooker has an automatic control system to control the movement of its position and the direction of rotation of the cooker, so that it always faces The direction of the sun; and project the focused light onto the end surface of the photocatalytic block exposed to...

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Abstract

The invention is a method for extending the lifetime of photogenerated electrons and holes in a (C,N)-TiO2 semiconductor porous block. A solar cooker is used to focus sunlight to heat the part of the (C,N)-TiO2 semiconductor porous block exposed to the liquid to be degraded, and the part of the (C,N)-TiO2 semiconductor porous block exposed to the liquid to be degraded and immersed in the liquid to be degraded A temperature difference is created between the lower parts. Due to the temperature difference effect, the block exhibits the separation of macroscopic electrons and holes, thereby forming a macroscopic electric field. The macroscopic electric field separates photogenerated electrons and holes. Thereby extending the lifetime of photogenerated electrons and holes in the (C,N)-TiO2 semiconductor porous bulk. In addition, the porous bulk photocatalytic material is made into a rectangular parallelepiped in the middle and a quadrangular pyramid shape at both ends. In this way, the photogenerated electrons gathered at the low temperature end are more likely to be concentrated at the thin tip part A of the block under the liquid, while the high temperature end is concentrated. The photogenerated holes are more likely to gather at the tip portion B of the block on the liquid, and the photogenerated electrons and holes are further separated, extending the lifetime of the photogenerated carriers.

Description

technical field [0001] The present invention is an extended (C,N)-TiO 2 A method for prolonging (C,N)-TiO 2 Innovative technology for the method of photogenerated electron and hole lifetime in semiconductor porous bulk. Background technique [0002] The recyclability of photocatalytic materials and the improvement of photocatalytic quantum efficiency are the solution to the problem of anatase titanium dioxide (TiO 2 ) Photocatalytic commercial application (environmental pollution control, degradation of harmful substances) bottleneck approach is currently a research hotspot in the field of photocatalysis, especially carbon and nitrogen doped TiO 2 ((C,N)-TiO 2 ) than pure TiO 2 It can absorb a wider range of visible light and is regarded as the main photocatalytic material for commercial applications. But the existing recyclable (C,N)-TiO 2 The cost is high; and due to the low specific surface area, most of the (C,N)-TiO can be recovered 2 Photocatalytic Quantum Effic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J35/10
CPCB01J21/063B01J27/24B01J35/60B01J35/39
Inventor 何琴玉杜纯吴泽宏黄伟源陈晓媚魏玉蕊
Owner SOUTH CHINA NORMAL UNIVERSITY