Gas spraying head and deposition device

Abstract

The invention discloses a gas spraying head and a deposition device. The gas spraying head comprises a cooling plate with an upper surface and a lower surface opposite to each other; the cooling plate includes a center area and a peripheral area; the peripheral area includes multiple cooling pipe areas; each cooling pipe area has a set of cooling pipes; one set of cooling pipes includes multiple arc pipe sections arranged from the center to the edge of the cooling plate in parallel; all the arc pipe sections are positioned on concentric circles with different radius; multiple connecting parts are arranged between the multiple arc pipe sections and the adjacent arc pipe sections; multiple ventilation grooves are formed among the connecting parts; the ventilation grooves penetrate through the cooling plate along the side walls of the adjacent arc pipe sections, and are positioned on the concentric circles with different radius; in one cooling pipe area, one set of ventilation grooves formed by the multiple ventilation grooves on the concentric circles with the same radius are communicated to a first gas output port and a second gas output port along with radius increment; and the center area includes multiple intake ports penetrating through the cooling plate. The gas spraying head can improve the film forming quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a gas shower head and a deposition device. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a chemical reaction of reacting substances under gaseous conditions to generate solid substances that are deposited on the surface of a heated solid substrate, and then obtain solid materials. It is realized through chemical vapor deposition devices. Specifically, the CVD device feeds the reaction gas into the reaction chamber through the gas inlet device, and controls reaction conditions such as pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process steps. [0003] Metal Organic Chemical Vapor Deposition (MOCVD) equipment is mainly used for the preparation of thin-layer single-crystal functional structural materials of III-V compounds, II-VI c...

AI Technical Summary

Problems solved by technology

[0004] However, the film quality formed by the existing metal-organic chemical vapor deposition device is not good, so it is necessary to improve the film-forming quality of the device by improving the metal-organic chemical vapor deposition device

Images