Gas spraying head and deposition device

A gas shower head, gas technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as poor film quality, achieve the effect of reducing impurities, improving utilization, and avoiding eddy currents

Active Publication Date: 2016-07-20
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the film quality formed by the existing metal-organic chemical vapor deposition device is not good, so it is

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas spraying head and deposition device
  • Gas spraying head and deposition device
  • Gas spraying head and deposition device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] As mentioned in the background art, the quality of thin films formed by existing metal-organic chemical vapor deposition devices is poor.

[0037] After research, please refer to figure 1 and figure 2 , figure 1 is a schematic top view structure diagram of a shower head according to an embodiment of the present invention, figure 2 is adopted figure 1 The schematic diagram of the cross-sectional structure of the metal-organic chemical vapor deposition device of the shower head shown.

[0038] The shower head includes: a shower panel 100 located at the top of the reaction chamber, the shower panel 100 includes a first shower port 101, a second shower port 102 and an interval spray port 103, the first spray port The shower outlet 101, the second shower outlet 102 and the interval shower outlet 103 are all strip-shaped, and the first shower outlet 101 and the second shower outlet 102 are successively arranged at intervals, and adjacent to the first shower outlet 101 a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a gas spraying head and a deposition device. The gas spraying head comprises a cooling plate with an upper surface and a lower surface opposite to each other; the cooling plate includes a center area and a peripheral area; the peripheral area includes multiple cooling pipe areas; each cooling pipe area has a set of cooling pipes; one set of cooling pipes includes multiple arc pipe sections arranged from the center to the edge of the cooling plate in parallel; all the arc pipe sections are positioned on concentric circles with different radius; multiple connecting parts are arranged between the multiple arc pipe sections and the adjacent arc pipe sections; multiple ventilation grooves are formed among the connecting parts; the ventilation grooves penetrate through the cooling plate along the side walls of the adjacent arc pipe sections, and are positioned on the concentric circles with different radius; in one cooling pipe area, one set of ventilation grooves formed by the multiple ventilation grooves on the concentric circles with the same radius are communicated to a first gas output port and a second gas output port along with radius increment; and the center area includes multiple intake ports penetrating through the cooling plate. The gas spraying head can improve the film forming quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a gas shower head and a deposition device. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a chemical reaction of reacting substances under gaseous conditions to generate solid substances that are deposited on the surface of a heated solid substrate, and then obtain solid materials. It is realized through chemical vapor deposition devices. Specifically, the CVD device feeds the reaction gas into the reaction chamber through the gas inlet device, and controls reaction conditions such as pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process steps. [0003] Metal Organic Chemical Vapor Deposition (MOCVD) equipment is mainly used for the preparation of thin-layer single-crystal functional structural materials of III-V compounds, II-VI c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/455
Inventor 泷口治久
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap