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Mask for laser direct writing and etching method of mask

A technology of laser direct writing and masking, applied in optics, originals for photomechanical processing, instruments, etc., can solve problems such as unfavorable coating process, low anti-laser damage threshold, difficult to control pattern accuracy, etc., to ensure line accuracy , Strong laser ablation ability, good thermal conductivity

Inactive Publication Date: 2016-07-20
CHINA BUILDING MATERIALS ACAD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the widely used masks are photoresist and other organic materials, but photoresist has the following disadvantages: 1) The threshold value of anti-laser damage is low. After using laser direct writing to etch patterns, the width of photoresist ablation is much larger than that of laser The diameter of the spot makes it difficult to control the pattern accuracy; 2) After the photoresist is ablated by laser, the cross-section presents an irregular inverted trapezoid, which is not conducive to the subsequent coating process

Method used

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  • Mask for laser direct writing and etching method of mask
  • Mask for laser direct writing and etching method of mask
  • Mask for laser direct writing and etching method of mask

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Embodiment Construction

[0035] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation of the laser direct writing mask and its etching method according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , structure, feature and effect thereof, detailed description is as follows. In the following description, different "one embodiment" or "embodiment" do not necessarily refer to the same embodiment. Furthermore, the particular features, structures, or characteristics of one or more embodiments may be combined in any suitable manner.

[0036] Such as figure 1 As shown, a kind of mask for laser direct writing proposed by an embodiment of the present invention, it comprises:

[0037] polishing substrate 1;

[0038] An organic thin film 2 attached to the surface of the polished substrate;

[0039] An oxide film 3 deposited on...

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Abstract

The invention relates to a mask for laser direct writing and an etching method of the mask. The mask comprises a polishing substrate, an organic thin film, an oxide thin film and a metal thin film, wherein the organic thin film is attached onto the surface of the polishing substrate, the oxide thin film is deposited on the surface of the organic thin film, the metal thin film is deposited on the surface of the oxide thin film. The metal film in the mask for laser direct writing has high heat conduction performance, heat generated by laser abalation can be timely conducted and dissipated, and the influence of laser abalation on a film layer is reduced; the oxide thin film is relatively high in laser abalation capability, and the line accuracy of laser direct writing can be ensured; and an organic film layer can react with a solvent, so that the mask can be enabled to be completely removed.

Description

technical field [0001] The invention relates to a mask and an etching method thereof, in particular to a mask for laser direct writing and an etching method thereof. Background technique [0002] Laser direct writing technology can etch graphics of any shape on the surface of the object, and use the mask material and coating process together to coat the etched graphics on the surface of the object. This method of laser direct writing mask is widely used in the preparation of chip etching, surface microstructure, electromagnetic shielding grid, etc., and the substrate materials used include ceramics, metals and organic substances. [0003] At present, the widely used masks are photoresist and other organic materials, but photoresist has the following disadvantages: 1) The threshold value of anti-laser damage is low. After using laser direct writing to etch patterns, the width of photoresist ablation is much larger than that of laser 2) After the photoresist is ablated by las...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/033G03F1/50B82B3/00
CPCB82B3/00G03F1/50H01L21/033
Inventor 徐博金扬利祖成奎邱阳张瑞伏开虎韩滨
Owner CHINA BUILDING MATERIALS ACAD
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