Active region contact windows of dynamic random access memory and manufacturing method of active region contact windows

Abstract

The invention provides active region contact windows of a dynamic random access memory and a manufacturing method of the active region contact windows. The manufacturing method of active regions of the memory comprises the step as follows a conducting layer is formed on on a substrate to cover contact window regions and bit lines. The dynamic random access memory at least comprises the substrate, an isolating structure in the substrate, the active regions, embedded-type word lines and the bit lines, wherein the active regions are partitioned through the isolating structure; the embedded-type word lines pass through the active regions; the bit lines are arranged on the substrate; and each active region comprises a plurality of contact window regions. After the conducting layer is formed, the conducting layer out of the contact window regions is removed to form a plurality of active region contact windows; and an insulating layer is formed on the substrate to cover the active region contact windows.

Description

technical field [0001] The invention relates to a dynamic random access memory (DRAM), in particular to an active area contact window (AAcontact) of the dynamic random access memory and a manufacturing method thereof. Background technique [0002] With the impact of the expansion of large manufacturers, the memory market environment is becoming increasingly severe. Each major manufacturer is actively working on the research and development of process technology and reducing the cost of the process. The main way to reduce the cost is to reduce the cost of the process. The shrinking chip size not only poses great challenges to exposure machine technology and etching capabilities, but also causes various adverse effects due to the continuous shrinking of the word line pitch and the isolation structure of the memory array. For example, the resistance value Rs of the contact window, due to the shrinking of the chip size, the volume of the contact window decreases, which in turn g...

AI Technical Summary

Problems solved by technology

The shrinking chip size not only poses great challenges to exposure machine technology and etching capabilities, but also causes various adverse effects due to the continuous shrinking of the word line pitch and the isolation structure of the memory array.

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