Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic/inorganic hybridized cuprous iodine anion high-polymeric chain-based semiconductor material

A semiconductor and anion technology, applied in the field of semiconductor materials and iodide-based semiconductor materials, to achieve the effects of low production cost, high yield, and simple equipment

Inactive Publication Date: 2016-07-27
CHINA JILIANG UNIV
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for today's technical application requirements, the available semiconductor materials are still insufficient, and there is still a lot of room for innovation and research and development.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic/inorganic hybridized cuprous iodine anion high-polymeric chain-based semiconductor material
  • Organic/inorganic hybridized cuprous iodine anion high-polymeric chain-based semiconductor material
  • Organic/inorganic hybridized cuprous iodine anion high-polymeric chain-based semiconductor material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A large number of organic-inorganic hybrid cuprous iodide anion polymer chain-based semiconductor materials (MV) n (Cu 2 I 4 ) n Preparation of crystal samples: Weigh 0.191g (1mmol) of cuprous iodide and dissolve it in 30ml of acetonitrile to obtain a clear solution A, weigh 0.222g (0.5mmol) of methyl viologen iodide and dissolve it in 5ml of water to obtain a clear solution solution B; then, the above solution B was added to the solution A to form turbidity immediately, and the stirring reaction was continued for half an hour after the addition was completed to form a large amount of crystal products, filtered to separate out the crystals, and then washed twice with water and ethanol, respectively, and vacuum-dried to finally obtain A large number of black crystals are the target product of the hybrid material, and the yield exceeds 80%.

Embodiment 2

[0029] Synthesis of organic-inorganic hybrid cuprous iodide anion polymer chain-based semiconductor material (MV) n (Cu 2 I 4 ) n Single crystal: Weigh 19 mg (0.1 mmol) of cuprous iodide and dissolve it in 5 ml of acetonitrile to obtain a clear solution A, weigh 22 mg (0.05 mmol) of methyl viologen iodide and dissolve it in 5 ml of water to obtain a clear solution B ; Then, put solution B in the test tube first, then slowly add solution A to the test tube to make it in the upper layer of solution B, seal the test tube and let it stand, after a few days, a large number of black block crystals are precipitated. A black bulk crystal with a size of 0.18mm*0.12mm*0.10mm was selected for X-ray single crystal structure testing. The structure diagram of the crystallographically independent unit of this compound is shown in the appendix figure 1 , the structure of its cuprous iodide anion polymer chain and the corresponding counter cation methyl viologen are shown in the appendix ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an organic / inorganic hybridized cuprous iodine anion high-polymeric chain-based semiconductor material and a preparation method thereof. The molecular structural formula of the organic / inorganic hybridized wide bandgap semiconductor material is (MV)n(Cu2I4)n, wherein in the formula, MV is organic cation methyl viologen with two units of positive charges; n is the number of repetitive units of a polymer structure; the (Cu2I4)n high-polymeric anion in the material is of a linear chain-shaped structure. Through coordination polymerization reaction of cuprous iodide and the solution of methyl viologen iodide, the organic / inorganic hybridized semiconductor material which is good in semiconductor property and thermal stability can be conveniently and cheaply prepared, and the material is moderate in bandgap width and good in thermal stability, and can be applied to the technical field of electronic materials.

Description

technical field [0001] The present invention relates to the technical field of semiconductor materials, to the field of inorganic polymer materials and organic-inorganic hybrid materials, and in particular to the field of iodide-based semiconductor materials. Background technique [0002] Electronic technology is one of the foundations of the modernization of science and technology, and it is also a distinctive feature of modern science and technology. At present, electronic technology has penetrated into all fields of the national economy, and the rise of the electronic industry has also brought about extensive and profound technological innovations in the national economy. Playing a major role in electronic technology is the heart of electronic equipment—components made of semiconductor materials. From this point of view, semiconductor materials are the basis of the electronics industry, and it is also the most important raw material for the electronics industry. Looking...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08G83/00
CPCC08G83/008
Inventor 柴文祥吴晓云宋莉朱秋梦郭冰秦来顺沈杭燕陈海潮舒康颖
Owner CHINA JILIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com