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A kind of organic-inorganic hybrid semiconductor material of silver iodide anion high polyhelical chain base

A high-polymer helix and anion technology, applied in the field of iodide-based semiconductor materials and semiconductor materials, to achieve the effects of simple process, easy purification and good thermal stability

Active Publication Date: 2019-04-19
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for today's technical application requirements, the available semiconductor materials are still insufficient, and there is still a lot of room for innovation and research and development.

Method used

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  • A kind of organic-inorganic hybrid semiconductor material of silver iodide anion high polyhelical chain base
  • A kind of organic-inorganic hybrid semiconductor material of silver iodide anion high polyhelical chain base
  • A kind of organic-inorganic hybrid semiconductor material of silver iodide anion high polyhelical chain base

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Vast amount of semiconducting material (MV) n (Ag 2 I 4 ) n Crystal sample preparation: Weigh 0.136g (0.8mmol) of silver nitrate and dissolve it in 5ml of water, weigh 0.177g (0.4mmol) of methyl viologen iodide and 0.135g (0.8mmol) of potassium iodide and dissolve it in 10ml A clear solution A was obtained in water; then, the above silver nitrate solution was added to the solution A, and it immediately became turbid. After the addition was completed, it was heated while stirring, and a large amount of crystal products were formed after heating to boiling and kept for 15 minutes. At this time, the reaction was stopped, and the crystals were precipitated by filtration. , washed twice with water and ethanol respectively, and dried in vacuum to obtain a large amount of red crystals, which is the target product of the hybrid material, with a yield of more than 80%.

Embodiment 2

[0029] Synthetic Semiconductor Materials (MV) n (Ag 2 I 4 ) n Single crystal: Weigh 17mg (0.1mmol) of silver nitrate dissolved in 10ml of water to obtain a colorless clear solution A, weigh 22mg (0.05mmol) of methyl viologen iodide and 34mg (0.2mmol) of potassium iodide dissolved in Clear solution B was obtained in 10 ml of water; then, put solution B in the test tube first, then slowly add solution A into the test tube so that it was in the upper layer of solution B, seal the test tube and let it stand, a large number of red needles appeared after a few days Crystals precipitated. Pick a red needle-like crystal with a size of 0.51mm*0.08mm*0.04mm for X-ray single crystal structure test. The structure diagram of the crystallographic independent unit of this compound is shown in the attached figure 1 , the structure diagram of its silver iodide anion polyhelical chain and the corresponding counter cation methyl viologen is shown in the appendix figure 2 , and its unit ce...

Embodiment 3

[0031] Vast amount of semiconducting material (MV) n (Ag 2 I 4 ) n Crystal sample preparation: weigh 0.136g (0.8mmol) of silver nitrate and dissolve it in 5 milliliters of water, weigh 0.177g (0.4mmol) of methyl viologen iodide and 0.120g (0.8mmol) of sodium iodide and dissolve it in A clear solution A was obtained in 10 milliliters of water; then, the above-mentioned silver nitrate solution was added to the solution A, and it immediately became turbid. After the addition was completed, it was heated while stirring, and a large amount of crystal products were formed after heating to boiling and kept for 15 minutes. At this time, the reaction was stopped and filtered. The crystals are precipitated, washed twice with water and ethanol, and dried in vacuum. Finally, a large amount of red crystals are obtained, which is the target product of the hybrid material, and the yield exceeds 80%.

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Abstract

The invention discloses a silver-iodine anion high-polymer helix chain based organic-inorganic hybrid semiconductor material and a preparation method thereof. A molecular formula of the organic-inorganic hybrid wide bandgap semiconductor material is (MV)n(Ag2I4)n, MV in the formula represents organic cation methyl viologen with two units of positive charges, n represents the number of repeated units of a high-polymer structure, and (Ag2I4)n polyanion in the material is of a unique helix chain structure. The organic-inorganic hybrid wide bandgap semiconductor material having good semiconductor performance and thermal stability performance is conveniently and cheaply prepared through coordination polymerization reaction and hybridizing replacement reaction of silver nitrate and alkali metal iodide and a solution of methyl viologen iodide, is moderate in bandgap width and good in heat stability and can be applied to technical field of photoelectron materials.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, to the field of inorganic polymer materials and organic-inorganic hybrid materials, in particular to the field of iodide-based semiconductor materials. Background technique [0002] Electronic technology is one of the foundations of modern science and technology, and it is also a prominent feature of modern science and technology. At present, electronic technology has penetrated into all fields of the national economy, and the rise of the electronic industry has also brought about extensive and profound technological innovations in the national economy. What plays a major role in electronic technology is the heart of electronic equipment-components made of semiconductor materials. From this point of view, semiconductor materials are the foundation of the electronics industry, and it is also the most important raw material for the electronics industry. Looking back at history, fr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G83/00
CPCC08G83/00
Inventor 柴文祥吴晓云宋莉朱秋梦郭冰秦来顺沈杭燕陈海潮舒康颖
Owner CHINA JILIANG UNIV
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