Interconnection structure and formation method thereof

Abstract

The invention provides an interconnection structure and a forming method thereof. The forming method includes: providing a substrate; forming a carbon-containing transition layer on the substrate; using a carbon-containing reaction gas to deposit a carbon content higher than that of the transition layer on the transition layer The adhesion layer, so that the carbon content of the deposited adhesion layer gradually increases from the part close to the substrate to the part far away from the substrate; a first dielectric layer with a higher carbon content than the adhesion layer is formed on the adhesion layer . The interconnection structure includes: a substrate, a transition layer; an adhesion layer arranged on the transition layer and having a carbon content higher than that of the transition layer, and the carbon content of the adhesion layer gradually increases from a part close to the substrate to a part away from the substrate. Large; the first dielectric layer, the carbon content of the first dielectric layer is higher than that of the adhesion layer. The beneficial effect of the present invention is that: the first dielectric layer can achieve better adhesion with the transition layer through the adhesive layer, and then it is not easy to generate cracks in the first dielectric layer, so that the performance of the interconnection structure is not easy to be affected by The interlayer dielectric layer is affected by cracks.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an interconnection structure and a forming method thereof. Background technique [0002] The semiconductor devices in the prior art integrated circuits are more and more dense, and the interconnection structures for realizing the electrical connection of the semiconductor devices are also increasing, and the resistance (R) and capacitance (C) of the interconnection structures produce more and more obvious parasitic effects, Thus, it is easy to cause problems such as transmission delay (RCDelay) and crosstalk (CrossTalk). [0003] The interconnection structure usually adopts conductive plugs of metal materials. In order to prevent the metal from diffusing to other adjacent components in the interconnection structure, in the prior art, a diffusion barrier layer (barrier layer) is provided at the conductive plugs of each interconnection structure for Reduces the problem o...

AI Technical Summary

Problems solved by technology

However, the interconnect structure using low-K or ultra-low-K materials is prone to cracks, which affects the performance of the interconnect structure.

Images