Unlock instant, AI-driven research and patent intelligence for your innovation.

A preparation method of doped polysiloxane sol anti-reflection film based on interface modification

A technology of polysiloxane sol and anti-reflection film, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem that the surface hardness of the anti-reflection film is not high enough, the scratch resistance is poor, and the performance and life of the product are affected and other problems, to achieve order and low packing density, anti-reflection effect, and improve the effect of surface hardness

Active Publication Date: 2017-11-28
SHAANXI COAL & CHEM TECH INST
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing products, the surface hardness of the anti-reflection film is not high enough, the scratch resistance is poor, and it is easy to scratch during use, thus affecting the performance and life of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A preparation method of doped polysiloxane sol anti-reflection film based on interface modification
  • A preparation method of doped polysiloxane sol anti-reflection film based on interface modification
  • A preparation method of doped polysiloxane sol anti-reflection film based on interface modification

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Configure SiO 2 Sol: Alkaline SiO was prepared from tetraethyl orthosilicate, absolute ethanol, deionized water and ammonia water as raw materials. 2 Sol, wherein the molar ratio of ethyl orthosilicate: absolute ethanol: deionized water: ammonia water is 1:45:3:0.1. Preparation of basic SiO 2 The method of sol is: after magnetically stirring the ethyl orthosilicate absolute ethanol solution for 3-10 minutes, add the solution of absolute ethanol, deionized water and ammonia water dropwise to the ethyl orthosilicate absolute ethanol solution, and continue After magnetic stirring for 2 h, seal and age at room temperature for 5 d.

[0037] (2) SiO 2 Sol modification treatment: Alkaline SiO 2 The sol is modified by polysiloxane modification technology to obtain a coating solution. Doped with polysiloxane and SiO 2 The volume ratio of the sol was 8%.

[0038](3) Clean the glass substrate, immerse the cleaned glass substrate in the sol, pull it after soaking for 30s...

Embodiment 2

[0044] (1) Configure SiO 2 Sol: Alkaline SiO was prepared from tetraethyl orthosilicate, absolute ethanol, deionized water and ammonia water as raw materials. 2 Sol, wherein the molar ratio of ethyl orthosilicate: absolute ethanol: deionized water: ammonia water is 1:60:8:0.1. Preparation of basic SiO 2 The method of sol is: after magnetically stirring the ethyl orthosilicate absolute ethanol solution for 3-10 minutes, add the solution of absolute ethanol, deionized water and ammonia water dropwise to the ethyl orthosilicate absolute ethanol solution, and continue After magnetically stirring until uniform, seal and age at room temperature for 5 days.

[0045] (2) SiO 2 Sol modification treatment: Alkaline SiO 2 The sol is modified by polysiloxane modification technology to obtain a coating solution. Doped with polysiloxane and SiO 2 The volume ratio of the sol was 12%.

[0046] (3) Clean the glass substrate, immerse the cleaned glass substrate in the sol, pull it after ...

Embodiment 3

[0052] (1) Configure SiO 2 Sol: Alkaline SiO was prepared from tetraethyl orthosilicate, absolute ethanol, deionized water and ammonia water as raw materials. 2 Sol, wherein the molar ratio of ethyl orthosilicate: absolute ethanol: deionized water: ammonia water is 1:80:1:0.1. Preparation of basic SiO 2 The method of sol is: after magnetically stirring the ethyl orthosilicate absolute ethanol solution for 3-10 minutes, add the solution of absolute ethanol, deionized water and ammonia water dropwise to the ethyl orthosilicate absolute ethanol solution, and continue After magnetically stirring until uniform, seal and age at room temperature for 5 days.

[0053] (2) SiO 2 Sol modification treatment: Alkaline SiO 2 The sol is modified by polysiloxane modification technology to obtain a coating solution. Doped with polysiloxane and SiO 2 The volume ratio of the sol was 2%.

[0054] (3) Clean the glass substrate, immerse the cleaned glass substrate in the sol, pull it after s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a doped polysiloxane sol anti-reflection film based on interface modification. After the anti-reflection film is grown on the surface of a substrate, the anti-reflection film is pretreated to ensure the formation of hydroxyl groups on the anti-reflection film. group, then immerse the substrate on which the anti-reflection film was grown in a solution containing mercapto groups, and form a monomolecular functional layer containing mercapto groups on the anti-reflection film by molecular self-assembly, and finally rinse with deionized water to remove the residual Solvent, blow dry. The present invention introduces a monomolecular functional layer on the surface of the anti-reflection film. The molecular chain of the monomolecular functional layer material is relatively short and has a certain rigidity. When the monomolecular layer is evenly covered on the surface of the material, vibration and energy dissipation can be sealed. , and the intermolecular van der Waals force is small, the order and packing density are low, which can effectively improve the surface hardness of the anti-reflection film, and improve the transmittance of the anti-reflection film, and has an obvious anti-reflection effect.

Description

【Technical field】 [0001] The invention belongs to the field of photovoltaic technology, and relates to a nano anti-reflection film, in particular to an interface modification method of the nano anti-reflection film. 【Background technique】 [0002] In the field of solar cells, the conversion efficiency of solar cells can be effectively improved by increasing the light transmittance of the glass substrate, which has always been a hot and difficult point in industry research. Coating an anti-reflection coating on the glass substrate of the solar cell can minimize the reflectivity and increase the transmittance. Developed nano anti-reflection coating glass for solar photovoltaics with high transmittance within the response spectrum range of solar cells, which can improve the conversion efficiency of solar cells to the same extent, reduce power generation costs, improve the market competitiveness of solar cell power generation, and shorten the time for grid-connected power genera...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216
CPCH01L31/02168
Inventor 赵炎魏葳
Owner SHAANXI COAL & CHEM TECH INST