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A light-emitting enhanced electron beam pumped ultraviolet light source and its preparation method

A technology of ultraviolet light source and electron beam, applied in the direction of excitation method/device, circuit, laser, etc., can solve the problem of low light output power, achieve the effect of uniformity, low cost, and enhanced reflection

Active Publication Date: 2019-05-14
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most electron beam pumped UV light sources face the problem of low output power

Method used

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  • A light-emitting enhanced electron beam pumped ultraviolet light source and its preparation method
  • A light-emitting enhanced electron beam pumped ultraviolet light source and its preparation method
  • A light-emitting enhanced electron beam pumped ultraviolet light source and its preparation method

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Embodiment Construction

[0033] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0034] Such as figure 1 As shown, the light-exiting enhanced electron beam pumped ultraviolet light source of this embodiment includes: a substrate 1, an epitaxial layer 2, a grid-shaped reflective layer 3, an electron beam pumping source 4, and a light-exiting window 5; wherein, the back side of the epitaxial layer Formed on the substrate 1, the epitaxial layer includes template material 21, buffer layer 22 and multiple quantum wells 23 sequentially from the back to the front, such as figure 2 As shown; Periodic grid-like scratches 31 are engraved on the front of the epitaxial layer 2, and the scratches go deep into the substrate 1; a uniform high-reflection metal film is evaporated on the unscratched surface and the scratched surface, A grid-like reflective layer 3 is formed, with a concave surface 32 at the scratch; a light exit windo...

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PUM

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Abstract

The invention discloses a light-emitting enhancement type electron beam pumping ultraviolet light source and a preparation method thereof. According to the light-emitting enhancement type electron beam pumping ultraviolet light source and the preparation method thereof, multiple quantum wells of an epitaxial layer serve as an active region, a potential well adopts digital alloy of a monoatomic layer or a subatomic layer, carrier localization can be improved, non-radiative recombination process can be inhibited, and internal quantum efficiency can be further improved; a latticed reflecting layer with a concave surface is formed by utilizing periodic grid scratches and evaporating a highly-reflective metal thin film, reflection of ultraviolet light can be enhanced, and the light extraction efficiency can be increased; an electron beam pumping source adopts a field emission electron beam, and the miniaturization and low cost of the field emission electron beam are conductive to commercialization of the electron beam pumping source; meanwhile, the electron beam pumping source is equipped with a metal gate, is much easier in control of cathode accelerated current, and can effectively solve the problem of electron emission uniformity.

Description

technical field [0001] The invention relates to electron beam pumped ultraviolet light source technology, in particular to a light-extracting enhanced electron beam pumped ultraviolet light source and a preparation method thereof. Background technique [0002] Solid-state ultraviolet light sources have great application value in the fields of sterilization and disinfection, ultraviolet curing, biochemical detection, non-line-of-sight communication and special lighting. Especially in recent years, the industrial demand for ultraviolet light sources has gradually shifted to the mid-ultraviolet and deep ultraviolet bands. At the same time, higher requirements have been put forward for the output power and efficiency of ultraviolet light sources. [0003] The third-generation semiconductor material has a wide direct bandgap, and its forbidden band width can be continuously adjusted in a wide range. Al(Ga)N materials cover all the bands of UVA, UVB, and UVC, and can realize ultra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/04H01S5/028H01S5/34H01S5/343
CPCH01S5/028H01S5/04H01S5/34H01S5/34333
Inventor 王新强王钇心刘双龙荣新王平秦志新童玉珍许福军沈波
Owner PEKING UNIV