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A kind of organic thin film transistor gas sensor and preparation method thereof

A gas sensor and organic thin film technology, applied in the sensor field, can solve problems such as inconvenient practical application and unstable instrument performance, and achieve the effects of improving stability and measurement accuracy, improving selectivity, and suppressing errors

Inactive Publication Date: 2018-06-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Baseline drift causes instability of instrument performance, which brings inconvenience to practical application

Method used

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  • A kind of organic thin film transistor gas sensor and preparation method thereof
  • A kind of organic thin film transistor gas sensor and preparation method thereof
  • A kind of organic thin film transistor gas sensor and preparation method thereof

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Embodiment

[0038] Such as figure 1 As shown, the present invention provides an organic thin film transistor gas sensor, which adopts a bottom-gate-bottom-contact structure, including: a gate located under an insulating substrate and a source, drain electrode and an active layer on the surface located on the insulating substrate; wherein , the channel between the source and the drain is designed as a gold interdigital electrode structure, the interdigital electrode spacing is 25 μm, and the channel width-to-length ratio is 160. The active layer takes the symmetrical axis of the gold interdigital electrode as the axis of symmetry is divided into two symmetrical partitions, such as figure 2 The gas-sensing material A is deposited in one partition, and the gas-sensing material B is deposited in the other partition. The gas-sensing material A and the gas-sensing material B are organic semiconductor gas-sensing thin films with different responses to the same specific gas.

[0039] Such as ...

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Abstract

The invention discloses an organic thin film transistor gas sensor, which belongs to the field of gas sensors. The present invention adopts a bottom gate bottom contact structure, including: a gate located under the insulating substrate, source and drain electrodes located on the insulating substrate, and an active layer on the surface; it is characterized in that an interdigitated electrode structure is used as the source and drain electrodes , the active layer is divided into two symmetrical sub-regions with the central axis of symmetry of the interdigital electrode as the symmetry axis, and each sub-region is deposited with organic semiconductor gas-sensitive films with different responses to the same specific gas. The sensor provided by the invention can improve the gas selectivity of the sensor, improve the phenomenon of baseline drift, and improve the stability and accuracy of the sensor; it has the advantages of fast response speed, convenient measurement, easy portability, and wide application range; Scale production to meet real needs.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to an organic thin film transistor gas sensor and a preparation method thereof. Background technique [0002] The gas sensor is the core of the gas detection system, and it is a device that converts a certain gas volume fraction into a corresponding electrical signal. The electrodeless oxide semiconductor gas sensor is the most widely used gas sensor with the most practical value. According to its mechanism, it can be divided into two types: resistive and non-resistive. Organic thin film transistor gas sensor (OTFT GasSensor) is a kind of non-resistive semiconductor gas sensor. Compared with traditional resistive gas sensors, OTFTs sensors not only have fast response speed, good selectivity, and can work at room temperature, but also use the basic characteristics of transistors to convert high resistance changes that are difficult to detect into easily detectable current changes. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/414B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00G01N27/4141
Inventor 谢光忠吴寸雪唐诗马行方苏元捷太惠玲杜晓松杜鸿飞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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