Dynamic storage based on open bit line structure

A dynamic memory and open bit line technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of low reliability and high energy consumption, and achieve the effect of improving data retention time

Active Publication Date: 2016-08-24
XI AN UNIIC SEMICON CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to overcome the technical problems of high energy consumption and low reliability in applying the existing double storage unit structure based on the closed bit line structure dynamic memory to the open bit line structure dynamic memory, the present invention provides an open Double memory cell structure dynamic memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dynamic storage based on open bit line structure
  • Dynamic storage based on open bit line structure
  • Dynamic storage based on open bit line structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Such as Figure 6 As shown, in the double memory cell mode, the open bit line structure is the same as the single memory cell structure mode, the difference is that two word lines are activated simultaneously in the double memory cell mode, so the control is very simple. Currently active memory cell array module rowblock The sense amplifier (SA) connected to the bit line needs the reference bit line (reference bit line) from the bit line of the adjacent memory cell array module rowblock, and currently activates wl The even-numbered bit line connected to the upper storage unit is connected to the sense amplifier SAblock on the right , whose reference bitline referencebitline is connected to the right rowblock bitline, currently active wl The odd bit line connected to the upper storage unit is connected to the left SAblock, and its reference bitline is connected to the left rowblock the bitline. The dual memory cell structure is realized by simultaneously activatin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a dynamic storage based on an open bit line structure. The dynamic storage comprises a decoder circuit, a sense amplifier and a plurality of dual-storage units, wherein the decoder circuit comprises a first decoding unit and a second decoding unit which have the same structure, an input end of a first XOR gate circuit is connected with an external address signal RA<0>, the other input end of the first XOR gate circuit is connected with a cfg_dualcell signal, and an output end of a first phase inverter controls a bit line Wl of one dual-storage unit in a storage unit array module to be opened; and an input end of a second XOR gate circuit is connected with an inverted signal/RAI<0> of the external address signal RA<0>, the other input end of the second XOR gate circuit is connected with the cfg_dualcell signal, and an output end of a second phase inverter controls the other bit line Wl of one dual-storage unit in the storage unit array module to be opened. According to the dynamic storage, the technical problems of high energy consumption and low reliability are overcome, and the data hold time of the dynamic storage is remarkably improved.

Description

technical field [0001] The invention relates to a storage unit of a dynamic memory, which is improved in that, by changing a row decoder, the single storage unit of a dynamic memory based on an open bitline architecture (open bitline architecture) in the prior art is improved into a double storage unit so that Increase the reliability of dynamic memory storage cells. Background technique [0002] With the shrinking of the process size, the capacitance of the dynamic memory storage unit is getting smaller and smaller, and the impact of leakage is getting bigger and bigger. The reliability of the dynamic memory storage unit is facing more and more challenges. How to improve the reliability of the dynamic memory storage unit Reliability has become a difficult point in the industry, and the dual storage unit structure, that is, the structure of storing one bit of storage data in two storage units, has become an effective method to improve the reliability of dynamic memory storag...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/4097G11C11/4094G11C11/408
CPCG11C11/4085G11C11/4094G11C11/4097
Inventor 亚历山大段会福俞冰谈杰
Owner XI AN UNIIC SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap