Preparation method of GaN-based light emitting diode

A light-emitting diode, N-type technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of GaN-based light-emitting diodes, achieve the effects of reducing dislocation defects, improving luminous efficiency, and improving crystal quality

Inactive Publication Date: 2016-08-31
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention aims at the problem of low luminous efficiency of GaN-based light-emitting diodes caused by the poor quality of existing GaN thin-film crystals, and provides a preparation method of GaN-based light-emitting diodes

Method used

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  • Preparation method of GaN-based light emitting diode
  • Preparation method of GaN-based light emitting diode
  • Preparation method of GaN-based light emitting diode

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preparation example Construction

[0033] The core idea of ​​the present invention is that the present invention provides a method for preparing a GaN-based light-emitting diode, such as figure 1 Shown: Include the following steps:

[0034] Step S1, providing a substrate;

[0035] Step S2, growing an N-type GaN layer on the substrate;

[0036] Step S3, growing a quantum well layer on the N-type GaN layer;

[0037] Step S4, growing a P-type GaN layer on the quantum well layer;

[0038] Wherein, the N-type GaN layer and / or the P-type GaN layer are grown by variable temperature, and the temperature in the variable temperature growth is a periodically fluctuating temperature.

[0039] The present invention grows the N-type GaN layer or / and the P-type GaN layer in a temperature-variable manner. Different growth temperatures can change the carbon content of the N-type GaN layer or / and P-type GaN layer. At the same time, different growth temperatures can change the N-type GaN layer. The lateral growth rate and ver...

Embodiment 1

[0042] Such as figure 1 As shown, first, step S1 is performed, such as figure 2 As shown, a substrate 100 is provided. The material of the substrate 100 may be a sapphire substrate, a GaN substrate, a silicon substrate or a silicon carbide substrate.

[0043] Then, if figure 1 As shown, proceed to step S2, such as image 3 As shown, an N-type GaN layer 130 is grown on the substrate 100 . In actual production, a sequentially stacked buffer layer 110 and an undoped GaN layer 120 are formed between the substrate 100 and the N-type GaN layer 130 . The material of the buffer layer 110 is GaN, AlN or AlGaN, the growth temperature of the buffer layer 110 is 450°C-650°C, and the growth thickness is 15nm-50nm; the growth temperature of the undoped GaN layer 120 is 900°C ~1200°C.

[0044] The N-type GaN layer 130 is grown by variable temperature, and the temperature in the variable temperature growth is a periodically fluctuating temperature (wherein, the periodically fluctuating...

Embodiment 2

[0053] see Figure 7-Figure 9 , among which, in Figure 7-Figure 8 , the reference numerals indicate the same Figure 2-Figure 6 The same expression and the same structure in the preparation method of the first embodiment, the difference between the preparation method of the second embodiment and the preparation method of the first embodiment are:

[0054] Such as Figure 7 As shown, in step S2 of the preparation method, an N-type GaN layer 131 is grown on the substrate 100 at a fixed temperature. The growth temperature of the N-type GaN layer 131 is 700°C-1200°C, the growth thickness is 1.5um-4.5um, and the Si doping concentration of the N-type GaN layer 131 is 1e18cm -3 ~3e19cm -3 .

[0055] Such as Figure 8 As shown, in step S4 of the preparation method, a P-type GaN layer 181 is grown on the quantum well layer 140, and the P-type GaN layer 181 is grown by variable temperature, and the temperature in the variable temperature growth fluctuates periodically temperatur...

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Abstract

The present invention discloses a preparation method of a GaN-based light emitting diode. The method comprises a substrate; a N-type GaN layer is grew on the substrate; a quantum well layer is grew on the N-type GaN layer; a quantum well layer is grew on the N-type GaN layer, a P-type GaN layer is grew on the quantum well layer; and the N-type GaN layer or/and the P-type GaN layer employ temperature varying growth, and the temperature in the temperature varying growth is the periodicity fluctuation temperature. The N-type GaN layer or/and the P-type GaN layer employ temperature varying growth so as to improve the crystal quality of the N-type GaN layer or/and the P-type GaN layer and enhance the luminescence efficiency of the GaN-based light emitting diode.

Description

technical field [0001] The invention belongs to the field of semiconductor light emitting, in particular to a preparation method of a GaN-based light emitting diode. Background technique [0002] With the advancement of light-emitting diode technology and the improvement of light efficiency, light-emitting diodes have become a new generation of lighting sources, widely used in backlights, display screens, decorative lighting, and gradually entering the fields of household lighting and outdoor lighting. As a solid-state light source, GaN-based light-emitting diodes have become the focus of R&D and industry attention in the international semiconductor and lighting fields due to their advantages of high brightness, high efficiency, long life, energy saving and environmental protection, and small size. However, in GaN-based light-emitting diodes, due to the differences in lattice constants and thermal expansion coefficients between sapphire, SiC or Si substrates and GaN-based fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/007H01L33/0075
Inventor 马后永琚晶游正璋李起鸣
Owner ENRAYTEK OPTOELECTRONICS
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