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Method of preparing perovskite film using radio-frequency magnetron sputtering technology

A radio frequency magnetron sputtering and perovskite technology, applied in sputtering coating, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of difficult control, high preparation cost, and difficult to popularize and use on a large scale. Achieve the effect of low cost, high repeatability, simple and controllable process

Inactive Publication Date: 2016-08-31
HEXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method also has disadvantages such as difficulty in control and high preparation cost, making it difficult to promote and use it on a large scale.

Method used

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  • Method of preparing perovskite film using radio-frequency magnetron sputtering technology
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  • Method of preparing perovskite film using radio-frequency magnetron sputtering technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0033] The difference between this example and Example 1 is that the CH used to soak the PbO film sample 3 NH 3 The concentration of the I / isopropanol solution is 50 mg / mL, and the remaining steps and implementation conditions are the same as in Example 1.

Embodiment 3

[0035] The difference between this example and Example 1 is that the CH used for soaking 3 NH 3 The concentration of the I / isopropanol solution is 30 mg / mL, and the remaining steps and implementation conditions are the same as in Example 1.

Embodiment 4

[0037] The difference between this embodiment and Embodiment 1 is that the area of ​​the FTO conductive glass substrate is 4×4cm 2 , the remaining steps and implementation conditions are the same as in Example 1.

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PUM

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Abstract

A method of preparing a perovskite film using a radio-frequency magnetron sputtering technology of the invention relates to the technical filed of functional film preparation. The method comprises the following steps: (1) cleaning a substrate; (2) growing a PbO film on the substrate using the radio-frequency magnetron sputtering technology to prepare a PbO film sample; (3) soaking the PbO film sample in isopropyl alcohol solution of methyl halide amine, and generating an organic metal halide perovskite film in situ through chemical reaction; and (4) annealing the perovskite film sample. The perovskite film prepared by the method is of high uniformity and coverage and good crystallization quality, and has the advantages of low cost, simple and controllable process, easy mass-production, and the like.

Description

technical field [0001] The invention relates to the technical field of preparation of functional thin films, in particular to a method for preparing perovskite thin films by radio frequency magnetron sputtering technology. Background technique [0002] in CH 3 NH 3 PB 3 The representative organic metal halide perovskite is a kind of composite crystal material formed by the self-assembly of organic molecules and inorganic molecules. Lifetime and diffusion length, bipolar transport, easy synthesis, low-temperature and low-cost preparation, etc. Therefore, this kind of material has broad application prospects in the fields of energy conversion and storage, flat panel display technology, and sensing technology. For thin-film semiconductor optoelectronic devices based on organometallic halide perovskite materials (such as solar cells, thin-film transistors, light-emitting diodes, etc.), the quality and morphology of perovskite films directly affect their performance. At pres...

Claims

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Application Information

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IPC IPC(8): H01L51/40H01L51/48H01L51/56C23C14/08C23C14/35C23C14/58
CPCC23C14/08C23C14/35C23C14/5846H10K30/80H10K30/00H10K71/00Y02E10/549Y02P70/50
Inventor 张志荣
Owner HEXI UNIV
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