Thin lids for mems devices
A technology of micro devices and components, applied in the field of MEMS engineering, which can solve the problems of increased conductivity loss and nonlinear effects
Active Publication Date: 2017-10-10
SILEX MICROSYST
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Problems solved by technology
[0004] However, silicon is usually doped to increase conductivity, which leads to negative effects such as increased losses and non-linear effects
[0005] In both RF applications and capacitance measurements, stray capacitance is the most significant negative factor and traditional silicon processing will inherently cause this problem
Method used
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Embodiment
[0100] Figure 9 A processing procedure for producing a MEMS device having a lid structure of glass having a TGV (Through Glass Vias) is shown.
[0101] A glass wafer 900 is bonded to a silicon carrier wafer 902 . The glass wafer may be a standard glass wafer with a typical thickness of 400 μm-600 μm which is thinned to about 100 μm (50 μm-200 μm) by grinding and CMP after the glass wafer is bonded to the carrier 902 . Alternatively, thin glass wafers (50 μm-200 μm) can be bonded to the carrier.
[0102] A via hole 904 having a diameter of 50 μm-100 μm is prepared (e.g., by dry or wet etching) in the glass wafer 900, and the via hole 904 may descend to a predetermined depth, i.e., stop within the glass (blind via as shown). ), or the carrier 902 can be used as a stop layer through the entire thickness of the glass, see Figure 9 a.
[0103] A 0.01 μm-1 μm thick (preferably, 0.1 μm thick) seed layer (not shown) is sputtered or evaporated on the glass wafer 900, followed by ...
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Abstract
The invention relates to a device comprising a base substrate (700) having miniature components (702) mounted on the base substrate. Suitably the device is provided with lead elements (704) for conducting signals to and from the component (702). The device also includes a spacer member (706), which can also serve as a conductive structure for conducting signals up and down. There is also a cover structure (708) of glass material, which is arranged above the base substrate (700) and bonded to the base substrate (700) via the spacer member (706), preferably by eutectic bonding, wherein the The lid structure (708) includes a via (710) including metal for providing an electrical connection through the lid structure. Via holes may be made by a punch / press method involving pressing a needle to a predetermined depth into the glass, while heating the glass to soften and applying pressure. However, other methods such as drilling, etching, shot peening are also possible.
Description
technical field [0001] The present invention relates to MEMS engineering and, in particular, to providing a thin lid structure made of a high resistance material such as glass with through-interconnections (vias) through the substrate (wafer). Background technique [0002] For RF (Radio Frequency) applications in MEMS structures and devices, the dielectric properties of the support structure are extremely important, and it is desirable to eliminate "cross-talk" between adjacent parts or elements on a chip or wafer , in which the component in question is disposed on a chip or wafer. In addition, the permeability constant is an important factor controlling the connection between the substrate and the component. [0003] The most commonly used material for building MEMS structures and devices is silicon, a material with a relatively high dielectric constant. [0004] However, silicon is usually doped to increase conductivity, which leads to negative effects such as increased ...
Claims
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IPC IPC(8): B81B7/00B81C1/00H01L21/50H01L23/48
CPCH01L21/50B81C1/00301B81B2207/095H01L24/94H01L2924/16235H01L23/08B81C2201/036B81C2203/0109B81B7/0006B81C1/00095H01L23/481B81B7/007B81B2201/01B81B2201/0264B81B2201/0271B81B2203/0118B81B2203/0127B81C2201/0153B81C2203/0145
Inventor E·凯尔维斯滕T·埃贝福斯N·斯维丁
Owner SILEX MICROSYST