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Planar gate IGBT and manufacturing method therefor

A planar gate and gate electrode technology, which is applied in the field of insulated gate bipolar transistors and planar insulated gate bipolar transistors, can solve the problems of electromagnetic radiation, increase switching loss of devices, and reduce switching speed of devices.

Inactive Publication Date: 2016-09-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The gate structure on the upper part of the wide JFET region brings large device capacitance, especially the gate-collector capacitance, which reduces the switching speed of the device, increases the switching loss of the device, and improves the ability of the gate drive circuit of the device. Require
In addition, the gate capacitance on the upper part of the JFET region of the device will form a negative differential capacitance effect when the device is turned on with a small current, which will cause the device to oscillate during the turn-on process and thus cause electromagnetic radiation problems

Method used

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  • Planar gate IGBT and manufacturing method therefor
  • Planar gate IGBT and manufacturing method therefor
  • Planar gate IGBT and manufacturing method therefor

Examples

Experimental program
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Effect test

Embodiment 1

[0044] A planar gate IGBT, its semi-cellular structure and the section along the AB line are as follows figure 2 with image 3 As shown, it includes: the back collector metal 10, the P-type collector region 9 located on the back collector metal 10 and connected to it, the N-type field stop layer 8 located on the P-type collector region 9 and connected to it, The N-drift region 7 located on the N-type field stop layer 8 and connected to it; the p-type base region 4 located on both sides of the upper part of the N-drift region 7 and connected to it, and the upper part of the p-type base region 4 and connected to each other Independent N+ emitter region 3 and P+ emitter region 2; emitter metal 1 located on the upper surface of N+ emitter region 3 and P+ emitter region 2; compound gate structure and floating p-type region located on the semiconductor surface between emitter metal 1 11. It is characterized in that: the composite gate structure includes a dielectric layer 5 and a ...

Embodiment 2

[0046] A planar gate IGBT, its semi-cellular structure and the cross-section along the AB and CD lines are as follows Figure 4 , Figure 5 with Image 6 As shown, on the basis of Embodiment 1, the gate electrode 6 also has a left-right symmetrical interdigitated finger at the center of the half-cell in the direction perpendicular to the length of the MOS channel. The length of the interdigitated fingers in the direction parallel to the length of the MOS channel is 3-5 microns, and the length in the direction perpendicular to the length of the MOS channel is 5-10 microns. The presence of the interdigitated fingers of the gate electrode 6 further enhances the lateral carrier diffusion from the gate to the emitter connection electrode, improving forward conduction characteristics and carrier concentration distribution.

Embodiment 3

[0048] A planar gate IGBT, its semi-cellular structure and the cross-section along the AB and CD lines are as follows Figure 7 , Figure 8 with Figure 9 As shown, on the basis of Example 2, there is also a layer of N-type N-type on the surface of the JFET region between the floating P-type regions 11, both sides of the floating P-type regions 11 and the p-type base region 4. Layer 12, the doping concentration of the N-type layer 12 is greater than the concentration of the N-drift region 7, and its junction depth is 0.1-0.3 microns smaller than the junction depth of the floating P-type region 11. The introduction of the N-type buried layer 15 further improves the forward conduction characteristics and carrier concentration distribution of the device. When the device breaks down, the N-type buried layer 15 is fully depleted.

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Abstract

The invention discloses a planar gate IGBT and a manufacturing method therefor, and belongs to the technical field of a power semiconductor device. A floating p type region is introduced to a part of region on the surface of a JFET region of the device on the basis of the conventional planar gate IGBT device structure, wherein the floating p type region and a gate electrode are distributed at intervals in a direction perpendicular to the length direction of an MOS channel; when the device is in forward conduction, the JFET region below the floating p type region has the same carrier concentration distribution as the JFET region below the gate electrode due to the transverse carrier diffusion from the gate electrode to the direction of the floating p type region in the JFET region in the direction perpendicular to the length direction of the MOS channel. According to the planar gate IGBT, the gate electrode capacitance, particularly the gate electrode-collector electrode capacitance, of the device is lowered without affecting the forward conduction characteristic of the device, so that the switching speed of the device is improved and the switching loss of the device is lowered; and meanwhile, the degradation of the blocking characteristic of the device is avoided.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (IGBT), in particular to a planar gate insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device combining MOS field effect and bipolar transistor. It not only has the advantages of easy driving and simple control of MOSFET, but also has the advantages of low conduction voltage of power transistor, large on-state current and small loss. It has become one of the core electronic components in modern power electronic circuits and is widely used in Various fields of the national economy such as communications, energy, transportation, industry, medicine, household appliances and aerospace. The application of IGBT plays an extremely important role in improving the performance of power electronic systems. [0003] Since the invention of IGBT, ...

Claims

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Application Information

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IPC IPC(8): H01L29/417H01L29/423H01L29/66H01L29/739
CPCH01L29/41708H01L29/42356H01L29/66333H01L29/7395
Inventor 张金平张玉蒙田丰境刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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