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Memristor circuit of realizing NAND gate or NOR gate logic and realization method thereof

A technology of memristor and circuit, which is applied in the field of memristor circuit, can solve the problems of large area and small area of ​​CMOS logic circuit, and achieve the effects of small area, low power consumption and novel ideas

Active Publication Date: 2016-09-21
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional AND (OR) gate logic circuit is mainly composed of multiple MOS transistors, with a large area
At the same time, Moore's Law in the field of transistors is approaching its limit, and it is difficult to reduce the size of MOS transistors. The area of ​​traditional CMOS logic circuits cannot continue to be reduced accordingly.

Method used

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  • Memristor circuit of realizing NAND gate or NOR gate logic and realization method thereof
  • Memristor circuit of realizing NAND gate or NOR gate logic and realization method thereof
  • Memristor circuit of realizing NAND gate or NOR gate logic and realization method thereof

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Embodiment Construction

[0035] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0036] The resistance of the memristor at a certain time is related to the current flowing before. The internal structure shows that the ratio of the doped area to the non-doped area determines the current resistance value, the specific resistance value R mem Calculated as follows:

[0037] R mem (t)=R on x+R off (1-x)

[0038] x = w D ∈ [ 0 , 1 ]

[0039] where R mem is the resistance value of the memristor, and x is the position of the boundary between the doped region and the non-doped region in the memristor at time t, such as figure 1 As shown, w is the doped layer, that is, the doped layer of TiO in the memristor 2-n thickness, D is the doped layer TiO in the memristor2-n with undoped TiO 2 The total thickness, R on...

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Abstract

A memristor circuit of realizing NAND gate or NOR gate logic of the present invention comprises a memristor M1 and a memristor M2. The positive end of the memristor M1 is connected with the drain of an NMOS transistor N1 and the source of an NMOS transistor N2, the negative end of the memristor M1 is connected with the source of an NMOS transistor N5 and the drain of an NMOS transistor N6, and the source of the NMOS transistor N1 and the drain of the NMOS transistor N5 are connected as an input end V1. The positive end of the memristor M2 is connected with the source of an NMOS transistor N3 and the drain of an NMOS transistor N4, the negative end of the memristor M2 is connected with the drain of an NMOS transistor N7 and the source of an NMOS transistor N8, and the source of the NMOS transistor N4 and the drain of the NMOS transistor N8 are connected as an input end V2. The drain of the NMOS transistor N2, the drain of the NMOS transistor N3,the source of the NMOS transistor N6, the source of the NMOS transistor N7 and the input end V3 of a phase inverter are connected mutually, and the output end of the phase inverter is used as the output end Vout of the memristor circuit. The grids of the NMOS transistors N1, N4, N6 and N7 are connected with an A-selection end, and the grids of the NMOS transistors N2, N3, N5 and N8 are connected with a B-selection end. The present invention also relates to a realization method of the memristor circuit. According to the present invention, a new idea is provided for the parts capable of being played by the memristors in the logic operation.

Description

technical field [0001] The present invention relates to a memristor circuit for realizing NAND and NOR gate logic and its realization method. Background technique [0002] The AND (OR) NOT gate is a basic logic circuit in digital circuits. In a NAND gate, when both inputs are high (1), the output is low (0). When at least one of the inputs is low (0), the output is high; the NOR gate is just the opposite, and when the inputs are all low (0), the output is high. When the input has at least one high level (1), the output is low level (0); the AND (OR) NOT gate logic circuit is combined with other logic in the digital system to complete complex logic operation functions, such as using AND Not, NOR, and XOR are combined to complete a certain codec function, etc. The traditional AND (OR) NOT gate logic circuit is mainly composed of a plurality of MOS transistors and has a large area. At the same time, Moore's Law in the field of transistors is approaching its limit, it is dif...

Claims

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Application Information

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IPC IPC(8): H03K19/20
CPCH03K19/20
Inventor 魏榕山李睿郭仕忠
Owner FUZHOU UNIVERSITY