Memristor circuit of realizing NAND gate or NOR gate logic and realization method thereof
A technology of memristor and circuit, which is applied in the field of memristor circuit, can solve the problems of large area and small area of CMOS logic circuit, and achieve the effects of small area, low power consumption and novel ideas
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0035] The present invention will be further described below with reference to the accompanying drawings and embodiments.
[0036] The resistance of the memristor at a certain time is related to the current flowing before. The internal structure shows that the ratio of the doped area to the non-doped area determines the current resistance value, the specific resistance value R mem Calculated as follows:
[0037] R mem (t)=R on x+R off (1-x)
[0038] x = w D ∈ [ 0 , 1 ]
[0039] where R mem is the resistance value of the memristor, and x is the position of the boundary between the doped region and the non-doped region in the memristor at time t, such as figure 1 As shown, w is the doped layer, that is, the doped layer of TiO in the memristor 2-n thickness, D is the doped layer TiO in the memristor2-n with undoped TiO 2 The total thickness, R on...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 