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Insulation dielectric film solid-state light-emitting device light emission enhancing method

An insulating medium and solid-state light-emitting technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as high energy consumption, small diameter, and large resistance, and achieve long device life, reduced heat production, and high luminous efficiency. Effect

Active Publication Date: 2016-09-28
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The formation and stability of the conductive channel is the key to the light emission of the device. At present, the formation of the conductive channel in the dielectric layer is random, and the diameter is small, the resistance is large, and the energy consumption is high.

Method used

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  • Insulation dielectric film solid-state light-emitting device light emission enhancing method
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  • Insulation dielectric film solid-state light-emitting device light emission enhancing method

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0027] The titanium (Ti) embedded insulating dielectric film solid-state light-emitting device proposed by the present invention is to prepare an insulating dielectric film containing one or more layers of titanium (Ti) embedded layers between two device electrodes on a silicon wafer, and prepare titanium (Ti) embedded The technology adopted for the layer and the insulating dielectric film is magnetron sputtering, and the multilayer film is sequentially produced on the silicon wafer. The thickness of the dielectric layer is 8nm, and the thickness of the embedded layer is 1-2nm. The materials used for the embedded layer film are Ti, Al, Mg and other active metals, the material used for the channel layer and the light emitting layer is HfO 2 , ZrO 2 , WO 3 , Al 2 o 3 and other insulating materials, but not limited to these materials, different process param...

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Abstract

The invention discloses an insulation dielectric film solid-state light-emitting device light emission enhancing method and describes the principle of light emission enhancement. A solid-state light-emitting device is composed of a signal electrode, a back electrode, and light-emitting units. Each light emitting unit is a MOS structure composed of a plurality of layers of thin films, each thin film is made of different materials or different technological parameters, and the physical properties of the films are different. When a voltage is applied to the thin films, the oxygen defects in the dielectric layer film form a continuous conductive channel to realize thermoluminescence. A layer of Ti thin film having the thickness of 1-2nm is added into the dielectric layer film to make the dielectric layer generate more oxygen defects, so that the light-emitting brightness is enhanced, the energy consumption is reduced, and the light-emitting efficiency is improved.

Description

technical field [0001] The field of the invention relates to the field of solid-state lighting and the field of flat panel display, in particular to a method for enhancing light emission of an insulating dielectric thin film solid-state light-emitting device. Background technique [0002] Solid-State Incandescent Lighting Emitting Devices (SSI-LEDs), proposed by Professor Yue Kuo of Texas A&M University (TAMU), is a light-emitting device that can directly generate white light. [0003] SSI-LEDs adopt a simple MOS device structure, which is different from the complex quantum well structure used in traditional LEDs. The core light-emitting layer is HfO 2 and other insulating dielectric films. The light-emitting principle of SSI-LEDs is different from that of traditional LEDs. When a voltage is applied to the device, the insulating dielectric film breaks down under the action of an electric field to form a permanent conductive channel, thereby thermoluminescent, similar to the...

Claims

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Application Information

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IPC IPC(8): H01L33/22H01L33/44
CPCH01L33/22H01L33/44
Inventor 吴胜利刘逸为张劲涛杨灿
Owner XI AN JIAOTONG UNIV
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