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Programmable blocked surge protection device

A technology of surge protection devices and resistors, applied in the direction of protection against overvoltage, etc., can solve the problems of high failure rate, inability to give system security, limited system bandwidth, etc., to achieve overvoltage and overcurrent protection, improve Application flexibility, ease of protection design effect

Inactive Publication Date: 2016-09-28
上海芯琦电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (2) Will limit system bandwidth (capacitive loads limit them to low-bandwidth applications);
[0006] (3) A complex design consisting of multiple components is required, resulting in a high failure rate;
[0007] (4) Larger space is often required;
[0008] (5) For the protection design scheme, the unit cost is high
Unfortunately, due to many problems in parallel protection, the current surge protection technology still cannot give sufficient safety guarantees for such systems
The result is costly companies in lost productivity and repairs to damaged equipment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Such as figure 1 As shown, a bidirectional blocking surge protection device, the surge protection device 10 is composed of a first depletion type field effect transistor Q1 (depletion type N-channel metal oxide semiconductor field effect transistor NMOSFET), a second The second depletion type field effect transistor Q2 (depletion type N-channel metal oxide semiconductor field effect transistor NMOSFET), the third depletion type field effect transistor Q3 (depletion type P-channel junction field effect transistor PJFET), the first A resistor R1 (constant current source resistor), a second resistor R2 (constant current source resistor) and an external resistor (Rex) form a conduction path in series structure, forming a circuit module.

[0068] The connection relationship of each device inside the surge protection device 10 (BSP) is described as follows:

[0069] The drain D of the first depletion-type field-effect transistor Q1 is connected to the input terminal A of the...

Embodiment 2

[0082] figure 2 As shown, as an improvement to the surge protection device in Embodiment 1, the surge protection device 20 adds a third resistor R3 (bias resistor), and the third resistor R3 is connected in parallel to the third depletion-type field effect transistor Q3 Between the source S and the drain D, that is, the third resistor R3 is connected to the source S of the depletion N-channel field effect transistor Q1 and the source S of the depletion N-channel field effect transistor Q2.

[0083] After any one of the first depletion type field effect transistor Q1 and the second depletion type field effect transistor Q2 is turned off, the third resistor R3 is the source S of the first depletion type field effect transistor Q1 or the second depletion The source S of the exhaust-type field effect transistor Q2 provides a stable potential to prevent this node from being floating in the "blocking" state of the surge protection device 20, so as to ensure that the bidirectional s...

Embodiment 3

[0085] image 3 As shown, as an improvement to the surge protection device in Embodiment 1, the surge protection device 30 further includes a first feedback voltage divider R and a second feedback voltage divider R', wherein,

[0086]The first feedback voltage divider R is composed of a fourth resistor R4 and a fifth resistor R5 in series, and the middle node of the first feedback voltage divider R is between the fourth resistor R4 and the fifth resistor R5; the second feedback voltage divider R ' is composed of the sixth resistor R6 and the seventh resistor R7, and the middle node of the second feedback voltage divider R' is between the sixth resistor R6 and the seventh resistor R7.

[0087] The first feedback voltage divider R is connected in parallel between the drain D of the third depletion field effect transistor Q3 and the first input terminal of the external resistor Rex, and the middle node of the first feedback voltage divider R is connected to the first drain The g...

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PUM

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Abstract

The invention discloses a programmable blocking surge protection device, which comprises first, second and third transistors, first, second and external resistors forming a conduction path in series structure, wherein the drain of the first transistor The pole is connected to the input terminal of the module, the source is connected to the first access terminal of the external resistor, the gate is connected to the source of the second transistor; the drain of the second transistor is connected to the output terminal of the module, and the source is connected to the third transistor The drain is connected, the gate is connected to the source of the first transistor; the source of the third transistor is connected to the second access terminal of the external resistor, and the gate is connected to the first and second resistors respectively; the other end of the first resistor It is connected with the input end of the module, and the other end of the second resistor is connected with the output end of the module. The advantages are: forming a variable resistance circuit similar to a resettable fuse, which can repeatedly block and reset infinitely, can realize the programmable application of device trigger current, and improve the flexibility of application of blocking surge protection devices.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to the field of semiconductor surge protection devices, and is a programmable blocking surge protection device. Background technique [0002] Power surge or transient overvoltage is defined as a voltage that significantly exceeds the design value in an electronic circuit. It mainly includes lightning strikes, power line laps, power line induction, or ground bounce. When the surge is high enough, transient overvoltages can cause serious damage to electronic equipment such as computers and phones. It also results in reduced equipment life. [0003] Transient voltage surge suppressors limit the energy of electrical surges that couple to equipment, thereby protecting electronic equipment from damage. Products in this category include surge protection thyristors, oxide varistors and avalanche diodes. Both types of devices are connected in parallel in the protected circuit, and the...

Claims

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Application Information

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IPC IPC(8): H02H3/20
CPCH02H3/20
Inventor 叶力
Owner 上海芯琦电子科技有限公司