Monolithic integrated photonics with lateral bipolar and BiCMOS
A technology of electronic devices and optoelectronic devices, applied in the direction of lasers, optical components, electric solid-state devices, etc., can solve problems such as multiple costs, increased manufacturing costs, and CMOS technology compatibility
Active Publication Date: 2016-10-05
IBM CORP
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Problems solved by technology
However, the conventional BJT fabrication process is not compatible with prevailing CMOS technology and thus results in much higher cost
Additionally, conventional BJT designs require a larger layout area than CMOS transistors, which further adds to manufacturing costs
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[0049] The present application will now be described in more detail with reference to the following discussion and accompanying drawings. It should be noted that the drawings of the present application are provided for illustrative purposes only and, as such, are not drawn to scale. It should also be noted that identical and corresponding elements are denoted by the same reference numerals.
[0050] In the following description, numerous specific details are set forth, such as particular structures, components, materials, dimensions, processing steps and techniques, in order to provide an understanding of various embodiments of the present application. However, it will be understood by those skilled in the art that the various embodiments of the present application may be practiced without these specific details. In other instances, well-known structures or process steps have not been described in detail in order not to obscure the application.
[0051] refer to figure 1 A ...
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After forming a first trench extending through a top semiconductor layer and a buried insulator layer and into a handle substrate of a semiconductor-on-insulator (SOI) substrate, a dielectric waveguide material stack including a lower dielectric cladding layer, a core layer and an upper dielectric cladding layer is formed within the first trench. Next, at least one lateral bipolar junction transistor (BJT), which can be a PNP BJT, an NPN BJT or a pair of complementary PNP BJT and NPN BJT, is formed in a remaining portion of the top semiconductor layer. After forming a second trench extending through the dielectric waveguide material stack to re-expose a portion of a bottom surface of the first trench, a laser diode is formed in the second trench.
Description
technical field [0001] The present application relates to semiconductor structures, and more particularly, to semiconductor structures including electronic and photonic components on a common substrate and methods of fabrication thereof. Background technique [0002] The integration of electronic (e.g., transistors, capacitors, resistors) and photonic (e.g., modulators, lasers, photodetectors, waveguides) components on a single integrated chip using standard semiconductor processes has been actively pursued in order to provide fast optical communication links road. Complementary metal oxide semiconductor (CMOS) transistors are commonly used in electronic / photonic integrated circuits to drive photonic components. CMOS transistors are also widely used in receiver circuits. It is well known that bipolar junction transistors (BJTs) have better analog and radio frequency (RF) characteristics than CMOS transistors. Therefore, it is more ideal to use BJT in RF integrated circuit...
Claims
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IPC IPC(8): H01L27/15H01L33/44H01L21/77
CPCH01L27/153H01L33/44H01L2933/0025G02B6/12004G02B2006/12038H01L21/8258H01L27/0623H01L27/082H01L27/1203H01L27/1207H01L27/1262H01L29/42304H01L29/6625H01L29/66545H01L29/7317H01L29/735H01S5/021H01S5/026H01S5/0261H01L29/78654G02B6/42G02B6/43H01L27/15G02B6/122H01S5/3013
Inventor 蔡劲E·里欧班端李宁宁德雄J-O·普卢查特D·K·萨达纳
Owner IBM CORP