Full-automatic pulse spraying device and method used for preparing thin film

Abstract

The invention provides a full-automatic pulse spraying device and method used for preparing a thin film. The full-automatic pulse spraying device comprises a spray gun, a gas pump, a controller, a container and a heating plate. The spray gun is vertically placed. A gun body is arranged on the upper portion of the spray gun. A spray nozzle is arranged at the lower end of the spray gun. The gas pump is connected with the gun body of the spray gun through a gas guide pipe and used for providing high-pressure work gas into the gun body of the spray gun. A gas valve switch is arranged on the gas guide pipe. The controller is used for controlling the gas valve switch to be turned on and turned off so as to control the gas pump to provide the high-pressure work gas into the gun body of the spray gun. The container is used for containing precursor liquid. The heating plate is used for heating a substrate on the heating plate. Under the effect of the high-pressure work gas, the precursor liquid in the container can enter the gun body of the spray gun through a liquid guide pipe and is atomized, and finally the precursor liquid is sprayed on the high-temperature substrate through the spray nozzle. The full-automatic pulse spraying device can automatically run and stop by itself once all parameters are well set, the full-automatic pulse spraying device is convenient to use, efficient and easy to operate, and the thin film which is large in area, controllable in thickness, uniform and compact can be prepared.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a fully automatic pulse spraying device and a spraying method for preparing thin films. Background technique [0002] Copper zinc tin sulfur selenide (Cu 2 ZnSn(S 1-x Se x ) 4 , abbreviation: CZTSSe) has attracted increasing attention due to its excellent properties such as environmental friendliness, rich crustal content, and good photoelectric performance. The band gap of CZTSSe is 1.5 eV, which is consistent with the optimal band gap required by semiconductor solar cells, and it is a direct band gap semiconductor with a large light absorption coefficient (>10 4 cm -1 ), so the thickness of the CZTSSe absorber layer required in the solar cell is small, which greatly reduces the size of the module. Due to its many excellent characteristics, in just a few years, CZTSSe thin film photovoltaic technology has developed rapidly, and the photoelectric conversion...

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