Charging method for polycrystalline silicon ingot casting process
A technology of polysilicon and ingot casting, which is applied in the charging field of polysilicon ingot casting process, which can solve the problems of excessive melting of corner and edge seeds, lower conversion efficiency of silicon wafers, and grain degradation, so as to avoid grain degradation , Avoid excessive melting and improve conversion efficiency
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[0029] The core idea of the present invention is to provide a charging method for polysilicon ingot casting process, which can avoid excessive melting of corner and edge seed crystals, avoid crystal grain degradation, and improve the conversion efficiency of silicon wafers.
[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0031] The first charging method for the polysilicon ingot process provided by the embodiment of the present application is as follows: figure 1 as shown, figure 1 It is a schematic di...
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