Preparation method of LED chip and LED chip prepared by adopting method

Abstract

The invention provides a preparation method of an LED chip and an LED chip prepared by adopting the method. The LED chip comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a current blocking layer and an ITO (Indium Tin Oxide) transparent conducting layer covered on the current blocking layer, and is characterized in that the N-type semiconductor layer, the light emitting layer, the P-type semiconductor layer, the current blocking layer and the ITO transparent conducting layer sequentially grow on a substrate, an N electrode is prepared on the N-type semiconductor layer, a P electrode is prepared on the ITO transparent conducting layer, an SiO2 protection layer is deposited at the upper surface of the chip at the outer side of the N electrode, and an SiON anti-reflection film and an SiO2 protection layer are sequentially deposited at the upper surface of the chip at the outer side of the P electrode. According to the invention, the SiON anti-reflection film is deposited at the surface of the ITO transparent conducting layer, and the SiON anti-reflection film is etched by using a phosphoric acid solution, thereby preventing the ITO transparent conducting film from being damaged or polluted in the manufacturing process of the chip, improving the quality of the ITO transparent conducting layer, enabling the chip voltage to be reduced while improving the brightness of the LED chip, and enabling an LED to be more energy-saving and more environment-friendly.

Description

technical field [0001] The invention relates to the field of LED chip manufacturing, in particular to a method for preparing an LED chip and an LED chip prepared by the method. Background technique [0002] In the process of LED chip production, the production of ITO (Indium Tin Oxide Indium Tin Oxide) film is a very important link. The purpose is to use the conductivity of the ITO film to expand the current, and because the ITO film has good transparency, the LED The light extraction efficiency of the chip. [0003] At present, the production of LED chips ranges from evaporation of ITO transparent conductive layer to deposition of SiO 2 The process of the protective layer includes steps in turn: 1. Evaporation of ITO transparent conductive layer; 2. ITO photolithography; 3. ITO etching and patterning; Etch to expose the N region; 7. Remove glue after ICP etching; 8. Deposit SiO 2 The protective layer. In the above steps, the ITO transparent conductive layer will be repe...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing an LED chip and the LED chip prepared by the method, so as to solve the problem that the ITO transparent conductive layer is easily damaged and polluted in the existing LED chip manufacturing process and thus affects the brightness of the LED. The preparation method of the LED chip is to deposit a SiON anti-reflection film on the surface of the ITO after evaporating the ITO transparent conductive layer, so that the ITO is protected by the SiON anti-reflection film during the chip manufacturing process, and before setting the P electrode, it is etched with a phosphoric acid solution. SiON anti-reflection coating improves the quality of ITO transparent conductive layer, which can effectively improve the light extraction efficiency of LED chips

Images