Epitaxial wafer manufacturing method and epitaxial wafer

Abstract

Provided is a method for manufacturing an epitaxial wafer which has excellent gettering capability while suppressing the formation of epitaxial defects. This method is characterized by involving: a cluster ion irradiation step in which cluster ions (16), which contain at least carbon, are irradiated in a dose amount of 2.0*1014 / cm2 to 1.0*1016 / cm2 onto the surface of a silicon wafer (10) having a resistivity of 0.001-0.1 omega*cm, and a modified layer (18) consisting of a solid solution of the constituent elements of the cluster ions (16) is formed on the surface of the silicon wafer (10); and a epitaxial layer forming step in which an epitaxial layer (20) having higher resistivity than the silicon wafer (10) is formed on the modified layer (18) of the silicon wafer (10).

Description

technical field [0001] The present invention relates to a manufacturing method of an epitaxial wafer and an epitaxial wafer, in particular to a manufacturing method of an epitaxial wafer that suppresses the formation of epitaxial defects and has excellent gettering capability. Background technique [0002] In recent years, the miniaturization of silicon devices has been progressing, and it is required that there be no crystal defects in the device formation region that increase the leakage current and shorten the lifetime of the carrier. In order to meet this requirement, an epitaxial wafer is manufactured in which an epitaxial layer is grown on a silicon wafer, and the epitaxial layer on the surface is used as a device formation region. [0003] One of the problems in the silicon device manufacturing process is the contamination of heavy metals into the wafer. For example, when heavy metals such as cobalt, copper, or nickel are mixed into the wafer, it will cause poor dwel...

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Problems solved by technology

[0008] However, when an epitaxial layer is formed on a silicon wafer or when a device element is formed on a device formation region, if contaminating metals adhere to the wafer surface, the contaminating metals cannot be detached from the device formation region due to the lowering of the temperature of the device formation process described above. May not be trapped into gettering regions that exist deep from the wafer surface

[0009] In addition, in order to form a gettering layer by implanting carbon ions at a high concentration at a position deep from the wafer surface, the accelerating voltage of the carbon ions must be increased. defect problem

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