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Semiconductor monocrystalline silicon multi-wire cutting clamping device and method

A multi-wire cutting and clamping device technology, applied in fine working devices, working accessories, stone processing equipment and other directions, can solve the problem of uneven thickness of silicon wafers, reduce the deviation of slice thickness, solve the problem of uneven thickness of silicon wafers, The effect of good application value

Inactive Publication Date: 2016-11-09
XIAN ZHONGJING SEMICON MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a clamping device for multi-wire cutting of semiconductor single crystal silicon, which solves the problem of uneven thickness of silicon wafers after multi-wire cutting of semiconductor single crystal

Method used

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  • Semiconductor monocrystalline silicon multi-wire cutting clamping device and method
  • Semiconductor monocrystalline silicon multi-wire cutting clamping device and method
  • Semiconductor monocrystalline silicon multi-wire cutting clamping device and method

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Experimental program
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Effect test

Embodiment 1

[0031] Processing of N-type 4-inch crystal ingot, with main reference surface, slice thickness 580 microns, asymmetric chamfering, used for energy-saving lamp power triode substrate production, processed according to conventional multi-wire cutting, the total thickness change is 14.3 microns . Such as figure 1 Shown, adopt the inventive method to process, and step is as follows:

[0032] According to the production demand, the surface of the corresponding ingot will be tumbled and processed, and the surface of the monocrystalline silicon ingot will be cleaned for cutting;

[0033] Carry out the crystal orientation test on the crystal orientation instrument, and make a mark. Use two splints 1 of resin material, place the silicon rod in the groove 2 inside the splint 1, and the arc length of the groove 2 inside the splint 1 is equal. is 4 inches, the width of splint 1 is 110mm,

[0034] Adhesive 4, which is epoxy resin AB glue, is used to bond the groove 2 to the silicon rod...

Embodiment 2

[0039] Processing N-type 6-inch ingot, with main reference surface, slice thickness 340 microns, symmetrical chamfering, used for bridge stack diode core substrate production, processed according to conventional multi-wire cutting, the total thickness change is 18.1 microns. Such as figure 2 Shown, adopt the inventive method to process, and step is as follows:

[0040] According to the production demand, the surface of the corresponding ingot will be tumbled and processed, and the surface of the monocrystalline silicon ingot will be cleaned for cutting;

[0041] Carry out the crystal orientation test on the crystal orientation instrument, and make a mark. Use two splints 1 of resin material, place the silicon rod in the groove 2 inside the splint 1, and the arc length of the groove 2 inside the splint 1 is equal. is 6 inches, the width of splint 1 is 156mm,

[0042] Adhesive 4, which is epoxy resin AB glue, is used to bond the groove 2 to the silicon rod, and place it for ...

Embodiment 3

[0047] Processing N-type 5-inch ingot, with main reference surface, slice thickness 400 microns, symmetrical chamfering, used for TVS diode core substrate production, processed according to conventional multi-wire cutting, the total thickness change is 15.5 microns. Such as image 3 Shown, adopt the inventive method to process, and step is as follows:

[0048] According to the production demand, the surface of the corresponding ingot will be tumbled and processed, and the surface of the monocrystalline silicon ingot will be cleaned for cutting;

[0049] Carry out the crystal orientation test on the crystal orientation instrument, and make a mark. Use two splints 1 of resin material, place the silicon rod in the groove 2 inside the splint 1, and the arc length of the groove 2 inside the splint 1 is equal. is 5 inches, the width of splint 1 is 100mm,

[0050] Adhesive 4, which is epoxy resin AB glue, is used to bond the groove 2 to the silicon rod, and place it for 10-20 minu...

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Abstract

The invention discloses a semiconductor monocrystalline silicon multi-wire cutting clamping device. The device comprises a set of clamping plates. Each clamping plate is provided with an arc-shaped groove. The surface of each groove is provided with adhesives. A fixture is connected to any one clamping plate through the adhesives and located at the end, away from the groove, of the clamping plate. According to the semiconductor monocrystalline silicon multi-wire cutting clamping device, the shape of a monocrystalline silicon rod to be cut is changed by using the clamping plates; meanwhile, the difference between the impact state of mortar and the aggregation state of the mortar on side faces during cutting is changed, and the purpose that cutting states in all positions in the vertical direction are equivalent during cutting is achieved; and the thickness deviation of slices can be effectively reduced, the problem of uneven thicknesses of silicon slices is solved, and the device has good application value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor single crystal silicon, and in particular relates to a semiconductor single crystal silicon multi-wire cutting clamping device, and the invention also relates to a semiconductor single crystal silicon multi-wire cutting method. Background technique [0002] Semiconductor free mortar multi-wire cutting is the main method of semiconductor single crystal silicon cutting in recent years, and has basically replaced the original inner circle cutting method. The semiconductor single crystal multi-wire cutting method overcomes the low production efficiency and damage to the thickness of single crystal silicon wafers. Disadvantages, the main principle is that the copper-plated steel wire pulled out by the pay-off wheel of the servo motor bypasses several steering pulleys, then bypasses the tension controller, and is continuously wound on several leading pulleys in the cutting chamber to form a Parall...

Claims

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Application Information

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IPC IPC(8): B28D5/04B28D7/04
CPCB28D5/045B28D5/0082
Inventor 孙新利肖万涛曹榛师伟张翠芸
Owner XIAN ZHONGJING SEMICON MATERIALS CO LTD
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