Semiconductor monocrystalline silicon multi-wire cutting clamping device and method

A multi-wire cutting and clamping device technology, applied in fine working devices, working accessories, stone processing equipment and other directions, can solve the problem of uneven thickness of silicon wafers, reduce the deviation of slice thickness, solve the problem of uneven thickness of silicon wafers, The effect of good application value

Inactive Publication Date: 2016-11-09
XIAN ZHONGJING SEMICON MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a clamping device for multi-wire cutting of semiconductor single crysta

Method used

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  • Semiconductor monocrystalline silicon multi-wire cutting clamping device and method
  • Semiconductor monocrystalline silicon multi-wire cutting clamping device and method
  • Semiconductor monocrystalline silicon multi-wire cutting clamping device and method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0030] Example 1

[0031] Processing N type 4 inches The crystal rod has a main reference surface, a slice thickness of 580 microns, and asymmetrical chamfering. It is used for the production of energy-saving lamp power triode core substrates. According to the conventional multi-wire cutting process, the total thickness changes to 14.3 microns. Such as figure 1 As shown, the method of the invention is used for processing, and the steps are as follows:

[0032] According to production requirements, the surface of the corresponding ingot will be processed by rolling, and the surface of the single crystal ingot will be cleaned for cutting and use;

[0033] Carry out the crystal orientation test on the crystallometer and mark it. Use two resin material splints 1 and place the silicon rods in the groove 2 inside the splint 1. The arc lengths of the groove 2 inside the splint 1 are equal Is 4 inches, the width of splint 1 is 110mm,

[0034] Adhesive glue 4, which is epoxy resin AB glue, i...

Example Embodiment

[0038] Example 2

[0039] Processing N type 6 inches The crystal rod has a main reference surface, a slice thickness of 340 microns, and a symmetrical chamfer. It is used for the production of a bridge diode core substrate. According to the conventional multi-line cutting process, the total thickness changes to 18.1 microns. Such as figure 2 As shown, the method of the invention is used for processing, and the steps are as follows:

[0040] According to production requirements, the surface of the corresponding ingot will be processed by rolling, and the surface of the single crystal ingot will be cleaned for cutting and use;

[0041] Carry out the crystal orientation test on the crystallometer and mark it. Use two resin material splints 1 and place the silicon rods in the groove 2 inside the splint 1. The arc lengths of the groove 2 inside the splint 1 are equal Is 6 inches, the width of splint 1 is 156mm,

[0042] Adhesive glue 4, which is epoxy resin AB glue, is to bond the groov...

Example Embodiment

[0046] Example 3

[0047] Processing N type 5 inches The ingot has a main reference surface, a slice thickness of 400 microns, and a symmetrical chamfer. It is used for the production of TVS diode core substrates. According to the conventional multi-line cutting process, the total thickness changes to 15.5 microns. Such as image 3 As shown, the method of the present invention is used for processing, and the steps are as follows:

[0048] According to production requirements, the surface of the corresponding ingot will be processed by rolling, and the surface of the single crystal ingot will be cleaned for cutting and use;

[0049] Carry out the crystal orientation test on the crystallometer and mark it. Use two resin material splints 1 and place the silicon rods in the groove 2 inside the splint 1. The arc lengths of the groove 2 inside the splint 1 are equal Is 5 inches, the width of splint 1 is 100mm,

[0050] Adhesive glue 4, which is epoxy resin AB glue, is to bond the groove ...

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Abstract

The invention discloses a semiconductor monocrystalline silicon multi-wire cutting clamping device. The device comprises a set of clamping plates. Each clamping plate is provided with an arc-shaped groove. The surface of each groove is provided with adhesives. A fixture is connected to any one clamping plate through the adhesives and located at the end, away from the groove, of the clamping plate. According to the semiconductor monocrystalline silicon multi-wire cutting clamping device, the shape of a monocrystalline silicon rod to be cut is changed by using the clamping plates; meanwhile, the difference between the impact state of mortar and the aggregation state of the mortar on side faces during cutting is changed, and the purpose that cutting states in all positions in the vertical direction are equivalent during cutting is achieved; and the thickness deviation of slices can be effectively reduced, the problem of uneven thicknesses of silicon slices is solved, and the device has good application value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor single crystal silicon, and in particular relates to a semiconductor single crystal silicon multi-wire cutting clamping device, and the invention also relates to a semiconductor single crystal silicon multi-wire cutting method. Background technique [0002] Semiconductor free mortar multi-wire cutting is the main method of semiconductor single crystal silicon cutting in recent years, and has basically replaced the original inner circle cutting method. The semiconductor single crystal multi-wire cutting method overcomes the low production efficiency and damage to the thickness of single crystal silicon wafers. Disadvantages, the main principle is that the copper-plated steel wire pulled out by the pay-off wheel of the servo motor bypasses several steering pulleys, then bypasses the tension controller, and is continuously wound on several leading pulleys in the cutting chamber to form a Parall...

Claims

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Application Information

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IPC IPC(8): B28D5/04B28D7/04
CPCB28D5/045B28D5/0082
Inventor 孙新利肖万涛曹榛师伟张翠芸
Owner XIAN ZHONGJING SEMICON MATERIALS CO LTD
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